18513103. METHOD AND CIRCUIT TO ISOLATE BODY CAPACITANCE IN SEMICONDUCTOR DEVICES simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
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METHOD AND CIRCUIT TO ISOLATE BODY CAPACITANCE IN SEMICONDUCTOR DEVICES
Organization Name
Taiwan Semiconductor Manufacturing Company, Ltd.
Inventor(s)
Garming Liang of Hsin-Chu (TW)
En-Hsiang Yeh of Hsin-Chu City (TW)
Wen-Sheng Chen of Taipei City (TW)
METHOD AND CIRCUIT TO ISOLATE BODY CAPACITANCE IN SEMICONDUCTOR DEVICES - A simplified explanation of the abstract
This abstract first appeared for US patent application 18513103 titled 'METHOD AND CIRCUIT TO ISOLATE BODY CAPACITANCE IN SEMICONDUCTOR DEVICES
Simplified Explanation
The abstract describes an amplifying circuit with a common-gate (CG) amplifier using a first transistor coupled to a first resistor.
- Common-gate (CG) amplifier circuit
- First transistor with source and body terminals connected through a resistor
- Method for amplifying signals efficiently
Potential Applications
- Signal amplification in electronic devices
- Audio amplifiers
- RF amplifiers
Problems Solved
- Signal distortion
- Inefficient amplification
- Noise interference
Benefits
- Improved signal quality
- Efficient signal amplification
- Reduced noise in amplified signals
Original Abstract Submitted
Disclosed is an amplifying circuit and method. In one embodiment, an amplifying circuit, includes: a common-gate (CG) amplifier, wherein the CG amplifier comprises a first transistor, wherein source terminal and body terminal of the first transistor is coupled together through a first resistor.
