18512092. 3D TRENCH CAPACITOR FOR INTEGRATED PASSIVE DEVICES simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
3D TRENCH CAPACITOR FOR INTEGRATED PASSIVE DEVICES
Organization Name
Taiwan Semiconductor Manufacturing Company, Ltd.
Inventor(s)
Xin-Hua Huang of Xihu Township (TW)
Yeong-Jyh Lin of Caotun Township (TW)
Rei-Lin Chu of Hsinchu City (TW)
3D TRENCH CAPACITOR FOR INTEGRATED PASSIVE DEVICES - A simplified explanation of the abstract
This abstract first appeared for US patent application 18512092 titled '3D TRENCH CAPACITOR FOR INTEGRATED PASSIVE DEVICES
Simplified Explanation
The present disclosure relates to a three-dimensional (3D) trench capacitor and methods for forming the same. The capacitor includes a first substrate overlaid by a second substrate, with trench capacitors extending into the front sides of both substrates and wires and vias stacked between them for electrical coupling.
- First substrate overlaid by second substrate
- Trench capacitors extending into front sides of substrates
- Wires and vias stacked between substrates for electrical coupling
- First through substrate via (TSV) extending through first substrate
- Capacitors and electrical coupling defining 3D trench capacitor
Potential Applications
- Memory devices
- Integrated circuits
- High-performance computing systems
Problems Solved
- Increasing memory density
- Improving performance of integrated circuits
- Enhancing data processing capabilities
Benefits
- Higher memory capacity
- Faster data processing speeds
- Improved overall performance of electronic devices
Original Abstract Submitted
Various embodiments of the present disclosure are directed towards a three-dimensional (3D) trench capacitor, as well as methods for forming the same. In some embodiments, a first substrate overlies a second substrate so a front side of the first substrate faces a front side of the second substrate. A first trench capacitor and a second trench capacitor extend respectively into the front sides of the first and second substrates. A plurality of wires and a plurality of vias are stacked between and electrically coupled to the first and second trench capacitors. A first through substrate via (TSV) extends through the first substrate from a back side of the first substrate, and the wires and the vias electrically couple the first TSV to the first and second trench capacitors. The first and second trench capacitors and the electrical coupling therebetween collectively define the 3D trench capacitor.
