18511438. Metal-Insulator-Metal Structure simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)

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Metal-Insulator-Metal Structure

Organization Name

Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor(s)

Yuan-Yang Hsiao of Hsinchu (TW)

Hsiang-Ku Shen of Hsinchu City (TW)

Dian-Hau Chen of Hsinchu (TW)

Metal-Insulator-Metal Structure - A simplified explanation of the abstract

This abstract first appeared for US patent application 18511438 titled 'Metal-Insulator-Metal Structure

Simplified Explanation

The semiconductor device described in the abstract includes a metal-insulator-metal structure with multiple conductor plate layers and dummy plates for alignment purposes.

  • Metal-insulator-metal structure with multiple conductor plate layers
  • Dummy plates for vertical alignment
  • First, second, and third openings for conductor plates
  • First and second dielectric layers for insulation
  • Simplified explanation of a patent application for a semiconductor device with a metal-insulator-metal structure and dummy plates for alignment.

Potential Applications

  • High-speed integrated circuits
  • Memory devices
  • Communication devices

Problems Solved

  • Improved alignment accuracy
  • Enhanced signal integrity
  • Reduced crosstalk between conductor plates

Benefits

  • Higher performance semiconductor devices
  • Increased reliability
  • Improved manufacturing efficiency


Original Abstract Submitted

Semiconductor devices, integrated circuits and methods of forming the same are provided. In one embodiment, a semiconductor device includes a metal-insulator-metal structure which includes a bottom conductor plate layer including a first opening and a second opening, a first dielectric layer over the bottom conductor plate layer, a middle conductor plate layer over the first dielectric layer and including a third opening, a first dummy plate disposed within the third opening, and a fourth opening, a second dielectric layer over the middle conductor plate layer, and a top conductor plate layer over the second dielectric layer and including a fifth opening, a second dummy plate disposed within the fifth opening, a sixth opening, and a third dummy plate disposed within the sixth opening. The first opening, the first dummy plate, and the second dummy plate are vertically aligned.