18510693. APPARATUS FOR DETECTING END POINT simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)

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APPARATUS FOR DETECTING END POINT

Organization Name

Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor(s)

Yi-Chao Mao of Taoyuan City (TW)

Chin-Chuan Chang of Hsinchu County (TW)

Szu-Wei Lu of Hsinchu City (TW)

APPARATUS FOR DETECTING END POINT - A simplified explanation of the abstract

This abstract first appeared for US patent application 18510693 titled 'APPARATUS FOR DETECTING END POINT

Simplified Explanation

The apparatus described in the patent application is designed to detect the endpoint of a grinding process on a reconstructed wafer by analyzing thickness signals generated by a sensor connected to the wafer.

  • The connecting device is linked to a sensor that senses the thickness of the wafer at different points, from the surface of an insulating layer to the interface of the wafer.
  • A timer generates a clock signal with pulses at regular intervals.
  • The controller filters the thickness signal based on the clock signal to identify the thickness extremum within each time interval, which helps determine the endpoint of the grinding process.

Potential Applications

  • Semiconductor manufacturing
  • Wafer processing industries
  • Quality control in manufacturing processes

Problems Solved

  • Accurately determining the endpoint of a grinding process
  • Improving efficiency in wafer processing
  • Enhancing quality control measures in manufacturing

Benefits

  • Increased precision in endpoint detection
  • Time and cost savings in wafer processing
  • Enhanced overall quality control in manufacturing processes


Original Abstract Submitted

An apparatus for detecting an endpoint of a grinding process includes a connecting device, a timer and a controller. The connecting device is connected to a sensor that periodically senses an interface of a reconstructed wafer comprising a plurality of dies of at least two types to generate a thickness signal comprising thicknesses from a surface of an insulating layer of the reconstructed wafer to the interface of the reconstructed wafer. The timer is configured to generate a clock signal having a plurality of pulses with a time interval. The controller is coupled to the sensor and the timer, and configured to filter the thickness signal according to the clock signal to output a thickness extremum among the thicknesses in the thickness signal within each time interval, wherein the thickness signal after the filtering is used to determine the endpoint of the grinding process being performed on the reconstructed wafer.