18510091. METHOD OF FORMING SEMICONDUCTOR DEVICE simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
Contents
METHOD OF FORMING SEMICONDUCTOR DEVICE
Organization Name
Taiwan Semiconductor Manufacturing Company, Ltd.
Inventor(s)
Jhih-Yu Wang of New Taipei City (TW)
Yung-Chi Chu of Kaohsiung City (TW)
Sih-Hao Liao of New Taipei City (TW)
METHOD OF FORMING SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18510091 titled 'METHOD OF FORMING SEMICONDUCTOR DEVICE
Simplified Explanation
The method described in the abstract involves encapsulating a device die, forming dielectric layers, redistribution lines, and alignment marks to electrically couple components within the device. Here are the key points of the innovation:
- Encapsulating a device die in an encapsulating material
- Forming a first dielectric layer over the device die and the encapsulating material
- Forming first redistribution lines extending into the first dielectric layer to electrically couple to the device die
- Forming an alignment mark over the first dielectric layer, consisting of elongated strips
- Forming a second dielectric layer over the first redistribution lines and the alignment mark
- Forming second redistribution lines extending into the second dielectric layer to electrically couple to the first redistribution lines, using the alignment mark for alignment
Potential Applications: - Semiconductor manufacturing - Microelectronics industry - Integrated circuit fabrication
Problems Solved: - Improved alignment and electrical coupling in device packaging - Enhanced reliability and performance of electronic components
Benefits: - Increased efficiency in device assembly - Higher quality and reliability of electronic devices - Cost-effective manufacturing processes
Original Abstract Submitted
A method includes encapsulating a device die in an encapsulating material, forming a first dielectric layer over the device die and the encapsulating material, forming first redistribution lines extending into the first dielectric layer to electrically couple to the device die, forming an alignment mark over the first dielectric layer, wherein the alignment mark includes a plurality of elongated strips, forming a second dielectric layer over the first redistribution lines and the alignment mark, and forming second redistribution lines extending into the second dielectric layer to electrically couple to the first redistribution lines. The second redistribution lines are formed using the alignment mark for alignment.
