View source for 18508788. MELT ANNEAL SOURCE AND DRAIN REGIONS simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)

=MELT ANNEAL SOURCE AND DRAIN REGIONS=


==Organization Name==

[[:Category:Taiwan Semiconductor Manufacturing Company, Ltd.|Taiwan Semiconductor Manufacturing Company, Ltd.]]


[[Category:Taiwan Semiconductor Manufacturing Company, Ltd.]]

==Inventor(s)==

[[:Category:Su-Hao Liu of Jhongpu Township (TW)|Su-Hao Liu of Jhongpu Township (TW)]][[Category:Su-Hao Liu of Jhongpu Township (TW)]]

[[:Category:Wen-Yen Chen of Hsinchu (TW)|Wen-Yen Chen of Hsinchu (TW)]][[Category:Wen-Yen Chen of Hsinchu (TW)]]

[[:Category:Li-Heng Chen of Taichung (TW)|Li-Heng Chen of Taichung (TW)]][[Category:Li-Heng Chen of Taichung (TW)]]

[[:Category:Li-Ting Wang of Hsinchu (TW)|Li-Ting Wang of Hsinchu (TW)]][[Category:Li-Ting Wang of Hsinchu (TW)]]

[[:Category:Liang-Yin Chen of Hsinchu (TW)|Liang-Yin Chen of Hsinchu (TW)]][[Category:Liang-Yin Chen of Hsinchu (TW)]]

[[:Category:Huicheng Chang of Tainan City (TW)|Huicheng Chang of Tainan City (TW)]][[Category:Huicheng Chang of Tainan City (TW)]]

[[:Category:Yee-Chia Yeo of Hsinchu (TW)|Yee-Chia Yeo of Hsinchu (TW)]][[Category:Yee-Chia Yeo of Hsinchu (TW)]]

[[:Category:Ying-Lang Wang of Tien-Chung Village (TW)|Ying-Lang Wang of Tien-Chung Village (TW)]][[Category:Ying-Lang Wang of Tien-Chung Village (TW)]]

==MELT ANNEAL SOURCE AND DRAIN REGIONS - A simplified explanation of the abstract==


This abstract first appeared for US patent application 18508788 titled 'MELT ANNEAL SOURCE AND DRAIN REGIONS

==Simplified Explanation==

The method described in the abstract involves forming a gate stack on a semiconductor substrate, removing a portion of the substrate to create a recess, growing a semiconductor region from the recess, implanting the region with an impurity, and performing a melt anneal on the region where at least a portion becomes molten.

* Formation of gate stack on semiconductor substrate
* Removal of portion of substrate to create a recess
* Growth of semiconductor region from the recess
* Implantation of impurity into the semiconductor region
* Melt anneal process on the semiconductor region

== Potential Applications ==
This technology could be applied in the manufacturing of advanced semiconductor devices, such as high-performance transistors and integrated circuits.

== Problems Solved ==
1. Enhancing the performance and efficiency of semiconductor devices.
2. Improving the integration density of components on a semiconductor substrate.
3. Facilitating the production of complex semiconductor structures.

== Benefits ==
1. Increased speed and functionality of semiconductor devices.
2. Higher level of miniaturization and integration on a chip.
3. Enhanced reliability and stability of semiconductor components.


==Original Abstract Submitted==

A method includes forming a gate stack on a first portion of a semiconductor substrate, removing a second portion of the semiconductor substrate on a side of the gate stack to form a recess, growing a semiconductor region starting from the recess, implanting the semiconductor region with an impurity, and performing a melt anneal on the semiconductor region. At least a portion of the semiconductor region is molten during the melt anneal.



[[Category:H01L29/08]]
[[Category:H01L21/02]]
[[Category:H01L21/265]]
[[Category:H01L21/285]]
[[Category:H01L21/324]]
[[Category:H01L21/768]]
[[Category:H01L21/8234]]
[[Category:H01L21/8238]]
[[Category:H01L27/092]]
[[Category:H01L29/161]]
[[Category:H01L29/66]]
[[Category:H01L29/78]]