18508195. TARGET CONTROL IN EXTREME ULTRAVIOLET LITHOGRAPHY SYSTEMS USING ABERRATION OF REFLECTION IMAGE simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
Contents
TARGET CONTROL IN EXTREME ULTRAVIOLET LITHOGRAPHY SYSTEMS USING ABERRATION OF REFLECTION IMAGE
Organization Name
Taiwan Semiconductor Manufacturing Company, Ltd.
Inventor(s)
Han-Lung Chang of Kaohsiung City (TW)
Li-Jui Chen of Hsinchu City (TW)
Yen-Shuo Su of Hsinchu City (TW)
TARGET CONTROL IN EXTREME ULTRAVIOLET LITHOGRAPHY SYSTEMS USING ABERRATION OF REFLECTION IMAGE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18508195 titled 'TARGET CONTROL IN EXTREME ULTRAVIOLET LITHOGRAPHY SYSTEMS USING ABERRATION OF REFLECTION IMAGE
Simplified Explanation
The method disclosed in the patent application involves controlling an extreme ultraviolet (EUV) lithography system by irradiating a target droplet with EUV radiation, detecting the reflected EUV radiation, determining aberration, calculating a Zernike polynomial, and taking corrective action to reduce Zernike coefficients shift.
- Target droplet is irradiated with EUV radiation
- Reflected EUV radiation is detected
- Aberration of the detected radiation is determined
- Zernike polynomial corresponding to the aberration is calculated
- Corrective action is taken to reduce Zernike coefficients shift
Potential Applications
- Semiconductor manufacturing
- Nanotechnology research
- Optical metrology
Problems Solved
- Improving lithography system accuracy
- Enhancing image resolution
- Minimizing aberrations in EUV lithography
Benefits
- Increased precision in lithography
- Enhanced quality of semiconductor devices
- Improved performance of optical systems
Original Abstract Submitted
A method of controlling an extreme ultraviolet (EUV) lithography system is disclosed. The method includes irradiating a target droplet with EUV radiation, detecting EUV radiation reflected by the target droplet, determining aberration of the detected EUV radiation, determining a Zernike polynomial corresponding to the aberration, and performing a corrective action to reduce a shift in Zernike coefficients of the Zernike polynomial.
