18508151. THIN-FILM TRANSISTOR, DISPLAY APPARATUS INCLUDING THE SAME, AND METHOD OF MANUFACTURING DISPLAY APPARATUS simplified abstract (Samsung Display Co., Ltd.)
THIN-FILM TRANSISTOR, DISPLAY APPARATUS INCLUDING THE SAME, AND METHOD OF MANUFACTURING DISPLAY APPARATUS
Organization Name
Inventor(s)
Shinbeom Choi of Yongin-si (KR)
Youngin Hwang of Yongin-si (KR)
Kohei Ebisuno of Yongin-si (KR)
Changha Kwak of Yongin-si (KR)
THIN-FILM TRANSISTOR, DISPLAY APPARATUS INCLUDING THE SAME, AND METHOD OF MANUFACTURING DISPLAY APPARATUS - A simplified explanation of the abstract
This abstract first appeared for US patent application 18508151 titled 'THIN-FILM TRANSISTOR, DISPLAY APPARATUS INCLUDING THE SAME, AND METHOD OF MANUFACTURING DISPLAY APPARATUS
Simplified Explanation
The patent application describes a thin film transistor substrate for a display apparatus, which includes a substrate, a buffer layer with an inorganic insulating layer, and a thin film transistor. The buffer layer has a low area ratio of a peak corresponding to an N-H bond, as analyzed by Fourier transform infrared spectroscopy (FTIR).
- Thin film transistor substrate for display apparatus:
- Includes substrate, buffer layer, and thin film transistor - Buffer layer has inorganic insulating layer - Low area ratio of N-H bond peak in buffer layer based on FTIR analysis
- Potential Applications:**
The technology can be applied in various display devices such as LCD screens, OLED displays, and electronic paper.
- Problems Solved:**
- Improved performance and reliability of thin film transistor substrates - Reduced interference from N-H bonds in buffer layer
- Benefits:**
- Enhanced display quality - Longer lifespan of display apparatus - Lower maintenance and repair costs
- Potential Commercial Applications of Thin Film Transistor Substrate Technology:**
Optimizing display quality in smartphones, tablets, TVs, and monitors for better user experience.
- Possible Prior Art:**
Prior art may include patents related to thin film transistor substrates for display devices, particularly focusing on buffer layer composition and performance analysis.
- Unanswered Questions:**
1. How does the low area ratio of the N-H bond peak in the buffer layer contribute to the overall performance of the thin film transistor substrate? 2. Are there any specific manufacturing processes or materials used in creating the inorganic insulating layer of the buffer layer that are crucial for the success of this technology?
Original Abstract Submitted
Provided are a thin film transistor substrate which include a substrate, a buffer layer and a thin film transistor, a display apparatus including the thin film transistor substrate, and a method of manufacturing the display apparatus including the thin film transistor substrate. The buffer layer includes an inorganic insulating layer. An area ratio of a peak corresponding to an N—H bond in the buffer layer is 0.5% or less based on a total peak area in a Fourier transform infrared spectroscopy (FTIR).
- Samsung Display Co., Ltd.
- Jinsuk Lee of Yongin-si (KR)
- Jin Jeon of Yongin-si (KR)
- Sugwoo Jung of Yongin-si (KR)
- Shinbeom Choi of Yongin-si (KR)
- Youngin Hwang of Yongin-si (KR)
- Byungno Kim of Yongin-si (KR)
- Heeyeon Kim of Yongin-si (KR)
- Kohei Ebisuno of Yongin-si (KR)
- Nalae Lee of Yongin-si (KR)
- Illhwan Lee of Yongin-si (KR)
- Jongmin Lee of Yongin-si (KR)
- Joohyeon Jo of Yongin-si (KR)
- Changha Kwak of Yongin-si (KR)
- Yongseon Jo of Yongin-si (KR)
- H10K59/121
- H10K77/10