18506122. LAYOUT OF STATIC RANDOM ACCESS MEMORY PERIPHERY CIRCUIT simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)

LAYOUT OF STATIC RANDOM ACCESS MEMORY PERIPHERY CIRCUIT

Organization Name

Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor(s)

Yangsyu Lin of New Taipei City (TW)

Chi-Lung Lee of New Taipei City (TW)

Chien-Chi Tien of Hsinchu City (TW)

Chiting Cheng of Taiching City (TW)

LAYOUT OF STATIC RANDOM ACCESS MEMORY PERIPHERY CIRCUIT - A simplified explanation of the abstract

This abstract first appeared for US patent application 18506122 titled 'LAYOUT OF STATIC RANDOM ACCESS MEMORY PERIPHERY CIRCUIT

Simplified Explanation

The patent application describes a static random access memory (SRAM) periphery circuit with transistors arranged in well regions of different conductivity types, with the second well region adjacent to the first well region.

• The SRAM periphery circuit includes n-type and p-type transistors in separate well regions.
• The n-type transistors are in a first well region, while the p-type transistors are in a second well region.
• The first and second well regions are positioned in the row direction at a distance equal to the bitcell-pitch of the SRAM array.
• The second well region is located next to the first well region in the row direction.

1. 1. 1. Potential Applications

• Memory devices
• Integrated circuits
• Semiconductor technology

1. 1. 1. Problems Solved

• Efficient organization of transistors in SRAM periphery circuits
• Optimization of layout design in semiconductor devices

1. 1. 1. Benefits

• Improved performance and reliability of SRAM circuits
• Enhanced functionality of memory devices
• Increased efficiency in semiconductor manufacturing processes

Original Abstract Submitted

A static random access memory (SRAM) periphery circuit includes a first n-type transistor and a second n-type transistor that are disposed in a first well region of first conductivity type, the first well region occupies a first distance in a row direction equal to a bitcell-pitch of an SRAM array. The SRAM periphery circuit includes a first p-type transistor and a second p-type transistor that are disposed in a second well region of second conductivity type. The second well region occupies a second distance in the row direction equal to the bitcell-pitch of the SRAM array. The second well region is disposed adjacent to the first well region in the row direction.