18504415. DC Bias in Plasma Process simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)

DC Bias in Plasma Process

Organization Name

Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor(s)

Sheng-Liang Pan of Hsinchu (TW)

Bing-Hung Chen of San-Xia Town (TW)

Chia-Yang Hung of Kaohsiung City (TW)

Jyu-Horng Shieh of Hsinchu (TW)

Shu-Huei Suen of Jhudong Township (TW)

Syun-Ming Jang of Hsinchu (TW)

Jack Kuo-Ping Kuo of Pleasanton CA (US)

DC Bias in Plasma Process - A simplified explanation of the abstract

This abstract first appeared for US patent application 18504415 titled 'DC Bias in Plasma Process

Simplified Explanation

- Plasma process involves generating a plasma with negatively charged oxygen ions and exposing a substrate to the plasma on a pedestal. - A negative DC bias voltage is applied to the pedestal to repel the negatively charged oxygen ions from the substrate during exposure to the plasma.

Potential Applications

- Semiconductor manufacturing - Surface cleaning and modification - Thin film deposition

Problems Solved

- Contamination of substrates during plasma processes - Inefficient removal of contaminants from substrates - Inconsistent film deposition on substrates

Benefits

- Improved substrate cleaning and modification - Enhanced thin film deposition - Increased efficiency and reliability in plasma processes

Original Abstract Submitted

Embodiments described herein relate to plasma processes. A plasma process includes generating a plasma containing negatively charged oxygen ions. A substrate is exposed to the plasma. The substrate is disposed on a pedestal while being exposed to the plasma. While exposing the substrate to the plasma, a negative direct current (DC) bias voltage is applied to the pedestal to repel the negatively charged oxygen ions from the substrate.