18504147. METHOD AND APPARATUS FOR DIFFRACTION-BASED OVERLAY MEASUREMENT simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)

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METHOD AND APPARATUS FOR DIFFRACTION-BASED OVERLAY MEASUREMENT

Organization Name

Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor(s)

Hung-Chih Hsieh of Miaoli County (TW)

Yen-Liang Chen of Zhubei City (TW)

METHOD AND APPARATUS FOR DIFFRACTION-BASED OVERLAY MEASUREMENT - A simplified explanation of the abstract

This abstract first appeared for US patent application 18504147 titled 'METHOD AND APPARATUS FOR DIFFRACTION-BASED OVERLAY MEASUREMENT

Simplified Explanation

The abstract describes a method of overlay error measurement involving a reference pattern module placed over a substrate with overlay measurement patterns. The method includes creating overlaps between reference patterns and overlay measurement patterns to determine overlay errors and total overlay error.

  • Method of overlay error measurement using reference pattern module and substrate
  • Creation of overlaps between reference patterns and overlay measurement patterns
  • Determination of overlay errors and total overlay error based on overlaps

Potential Applications

  • Semiconductor manufacturing
  • Nanotechnology
  • Optical alignment systems

Problems Solved

  • Accurate measurement of overlay errors
  • Improving alignment in manufacturing processes
  • Enhancing quality control in production

Benefits

  • Increased precision in overlay error measurement
  • Improved efficiency in manufacturing processes
  • Enhanced product quality and reliability


Original Abstract Submitted

A method of overlay error measurement includes disposing a reference pattern module over a substrate. The substrate includes first and second overlay measurement patterns in first and second locations. The reference pattern module includes first and second reference patterns. The method includes creating a first overlap of the first reference pattern with the first overlay measurement pattern and a second overlap of the second reference pattern with the second overlay measurement pattern. The method further includes determining a first overlay error between the first reference pattern of the reference pattern module and the first overlay measurement pattern of the substrate and determining a second overlay error between the second reference pattern and the second overlay measurement pattern. The method also includes determining a total overlay error between the first and second overlay measurement patterns of the substrate based on the first and second overlay errors.

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