18504136. SEMICONDUCTOR PACKAGE AND METHOD OF FABRICATING SEMICONDUCTOR PACKAGE simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)

SEMICONDUCTOR PACKAGE AND METHOD OF FABRICATING SEMICONDUCTOR PACKAGE

Organization Name

Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor(s)

Zi-Jheng Liu of Taoyuan City (TW)

Chen-Cheng Kuo of Shin-Chu county (TW)

Hung-Jui Kuo of Hsinchu City (TW)

SEMICONDUCTOR PACKAGE AND METHOD OF FABRICATING SEMICONDUCTOR PACKAGE - A simplified explanation of the abstract

This abstract first appeared for US patent application 18504136 titled 'SEMICONDUCTOR PACKAGE AND METHOD OF FABRICATING SEMICONDUCTOR PACKAGE

Simplified Explanation

The method of fabricating a semiconductor package involves:

• Providing a substrate with at least one contact
• Forming a redistribution layer on the substrate
• Performing a double exposure process to the dielectric material layer
• Forming a dual damascene opening in the dielectric material layer
• Forming a seed metallic layer over the dual damascene opening
• Forming a metal layer over the seed metallic layer
• Forming a redistribution pattern in the dual damascene opening and electrically connecting it with the at least one contact

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1. 1. 1. Potential Applications

• Semiconductor packaging industry
• Electronics manufacturing

1. 1. 1. Problems Solved

• Efficient redistribution of electrical connections
• Improved packaging reliability

1. 1. 1. Benefits

• Enhanced electrical connectivity
• Increased packaging efficiency
• Improved overall performance of semiconductor devices

Original Abstract Submitted

A method of fabricating a semiconductor package includes providing a substrate having at least one contact and forming a redistribution layer on the substrate. The formation of the redistribution layer includes forming a dielectric material layer over the substrate and performing a double exposure process to the dielectric material layer. A development process is then performed and a dual damascene opening is formed in the dielectric material layer. A seed metallic layer is formed over the dual damascene opening and over the dielectric material layer. A metal layer is formed over the seed metallic layer. A redistribution pattern is formed in the first dual damascene opening and is electrically connected with the at least one contact.