18499964. SEMICONDUCTOR PACKAGE HAVING AN ENCAPULANT COMPRISING CONDUCTIVE FILLERS AND METHOD OF MANUFACTURE simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
Contents
SEMICONDUCTOR PACKAGE HAVING AN ENCAPULANT COMPRISING CONDUCTIVE FILLERS AND METHOD OF MANUFACTURE
Organization Name
Taiwan Semiconductor Manufacturing Company, Ltd.
Inventor(s)
Jyh Chwen Frank Lee of Palo Alto CA (US)
Fong-Yuan Chang of Hsinchu (TW)
Sam Vaziri of San Jose CA (US)
Po-Hsiang Huang of Tainan City (TW)
SEMICONDUCTOR PACKAGE HAVING AN ENCAPULANT COMPRISING CONDUCTIVE FILLERS AND METHOD OF MANUFACTURE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18499964 titled 'SEMICONDUCTOR PACKAGE HAVING AN ENCAPULANT COMPRISING CONDUCTIVE FILLERS AND METHOD OF MANUFACTURE
Simplified Explanation
The patent application describes packaged semiconductor devices with high-thermal conductivity molding compounds.
- Semiconductor device includes a redistribution structure, die, through via, insulation layer, and encapsulant with conductive fillers.
- Conductive fillers in encapsulant range from 70% to about 95% by volume.
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- Potential Applications
- High-performance electronic devices
- Power electronics
- Automotive electronics
- Problems Solved
- Improved thermal management
- Enhanced reliability of semiconductor devices
- Increased performance of electronic systems
- Benefits
- Better heat dissipation
- Longer lifespan of electronic components
- Higher efficiency in electronic devices
Original Abstract Submitted
Packaged semiconductor devices including high-thermal conductivity molding compounds and methods of forming the same are disclosed. In an embodiment, a semiconductor device includes a first redistribution structure; a first die over and electrically coupled to the first redistribution structure; a first through via over and electrically coupled to the first redistribution structure; an insulation layer extending along the first redistribution structure, the first die, and the first through via; and an encapsulant over the insulation layer, the encapsulant surrounding portions of the first through via and the first die, the encapsulant including conductive fillers at a concentration ranging from 70% to about 95% by volume.
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Xinyu Bao of Fremont CA (US)
- Lee-Chung Lu of Taipei (TW)
- Jyh Chwen Frank Lee of Palo Alto CA (US)
- Fong-Yuan Chang of Hsinchu (TW)
- Sam Vaziri of San Jose CA (US)
- Po-Hsiang Huang of Tainan City (TW)
- H01L23/42
- H01L21/48
- H01L21/56
- H01L23/00
- H01L23/29
- H01L23/31
- H01L23/48
- H01L23/498
- H01L23/538
- H01L25/10