18499449. MEMORY DEVICE AND OPERATING METHOD THEREOF simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)

MEMORY DEVICE AND OPERATING METHOD THEREOF

Organization Name

Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor(s)

He-Zhou Wan of Shanghai City (CN)

Xiu-Li Yang of Shanghai City (CN)

Mu-Yang Ye of Nanjing City (CN)

Yan-Bo Song of Shanghai City (CN)

MEMORY DEVICE AND OPERATING METHOD THEREOF - A simplified explanation of the abstract

This abstract first appeared for US patent application 18499449 titled 'MEMORY DEVICE AND OPERATING METHOD THEREOF

Simplified Explanation

The memory device described in the abstract includes three transistors arranged in a specific order along a direction, with each transistor having a specific length along that direction. The first transistor is connected to a first word line, the second transistor is connected to a second word line, and the third transistor is connected between ground and a node that is connected to both the first and second nodes.

• The memory device includes a first transistor, a second transistor, and a third transistor.
• The first transistor is connected to a first word line at a first node.
• The second transistor is connected to a second word line at a second node.
• The control terminal of the first transistor is connected to the control terminal of the second transistor.
• The third transistor is connected between ground and a node that is connected to both the first and second nodes.
• In a layout view, each transistor has a specific length along a direction, and they are arranged in a specific order along that direction.

Potential Applications:

• Memory devices in electronic devices
• Computer systems
• Data storage systems

Problems Solved:

• Efficient memory storage
• Improved data retrieval
• Enhanced memory device layout

Benefits:

• Increased memory device performance
• Enhanced data processing speed
• Improved overall efficiency in electronic devices

Original Abstract Submitted

A memory device includes a first transistor, a second transistor and a third transistor. The first transistor is coupled to a first word line at a first node. The second transistor is coupled to a second word line different from the first word line at a second node. A control terminal of the first transistor is coupled to a control terminal of the second transistor. The third transistor is coupled between a ground and a third node which is coupled to each of the first node and the second node. In a layout view, each of the first transistor and the second transistor has a first length along a direction. The first transistor, the third transistor and second transistor are arranged in order along the direction. A method is also disclosed herein.