18494759. MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)

MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

Organization Name

TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor(s)

Jiun-Ming Kuo of Taipei City (TW)

Hsin-Chih Chen of New Taipei City (TW)

Che-Yuan Hsu of Hsinchu City (TW)

Kuo-Chin Liu of Hualien County (TW)

Han-Yu Tsai of Hsinchu (TW)

You-Ting Lin of Miaoli county (TW)

Jen-Hong Chang of Hsinchu (TW)

MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 18494759 titled 'MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

Simplified Explanation

The patent application describes a method of manufacturing a semiconductor device with the following steps:

• Forming a protrusion in a substrate using an anisotropic etch process, resulting in an inclined sidewall.
• Creating a recess on the sidewall of the protrusion through an isotropic etch process, where a by-product covers a first portion of the sidewall while exposing a second portion, leading to the formation of the recess between the two portions of the sidewall.

Potential applications of this technology:

• Semiconductor manufacturing
• Microelectronics industry
• Nanotechnology

Problems solved by this technology:

• Improving the efficiency of semiconductor device manufacturing processes
• Enhancing the performance of semiconductor devices
• Enabling the creation of more complex semiconductor structures

Benefits of this technology:

• Increased precision in semiconductor device fabrication
• Enhanced functionality of semiconductor devices
• Potential for developing smaller and more powerful semiconductor components

Original Abstract Submitted

A method of manufacturing a semiconductor device includes at least the following steps. A protrusion is formed in a substrate by an anisotropic etch process, wherein a sidewall of the protrusion is inclined. A recess is formed on the sidewall of the protrusion by an isotropic etch process, wherein during the isotropic etch process, a by-product covers a first portion of the sidewall of the protrusion while exposing a second portion of the sidewall of the protrusion, so that the recess is formed between the first portion and the second portion of the sidewall.