18493130. SOLID-STATE IMAGE PICKUP UNIT AND ELECTRONIC APPARATUS simplified abstract (Sony Semiconductor Solutions Corporation)

SOLID-STATE IMAGE PICKUP UNIT AND ELECTRONIC APPARATUS

Organization Name

Sony Semiconductor Solutions Corporation

Inventor(s)

Tetsuji Yamaguchi of Kanagawa (JP)

SOLID-STATE IMAGE PICKUP UNIT AND ELECTRONIC APPARATUS - A simplified explanation of the abstract

This abstract first appeared for US patent application 18493130 titled 'SOLID-STATE IMAGE PICKUP UNIT AND ELECTRONIC APPARATUS

Simplified Explanation

The patent application describes a solid-state image pickup unit with a photoelectric conversion device and field-effect transistors for signal reading.

• The unit includes a substrate made of a first semiconductor, a photoelectric conversion device with a first electrode, a photoelectric conversion layer, and a second electrode, and multiple field-effect transistors for signal reading.
• The field-effect transistors consist of a transfer transistor and an amplification transistor, with the transfer transistor containing a second semiconductor with a larger band gap than the first semiconductor.
• One terminal of the transfer transistor also serves as the first or second electrode of the photoelectric conversion device, and the other terminal is connected to the gate of the amplification transistor.

Potential applications of this technology:

• Digital cameras
• Smartphone cameras
• Surveillance cameras
• Medical imaging devices

Problems solved by this technology:

• Improved signal reading from the photoelectric conversion device
• Enhanced image quality
• Reduction in noise and distortion in captured images

Benefits of this technology:

• Higher quality images
• Better performance in low light conditions
• Increased efficiency in signal processing
• Potential for smaller and more compact image pickup units

Original Abstract Submitted

A solid-state image pickup unit includes: a substrate made of a first semiconductor; a substrate made of a first semiconductor; a photoelectric conversion device provided on the substrate and including a first electrode, a photoelectric conversion layer, and a second electrode in order from the substrate; and a plurality of field-effect transistors configured to perform signal reading from the photoelectric conversion device. The plurality of transistors include a transfer transistor and an amplification transistor, the transfer transistor includes an active layer containing a second semiconductor with a larger band gap than that of the first semiconductor, and one terminal of a source and a drain of the transfer transistor also serves the first electrode or the second electrode of the photoelectric conversion device, and the other terminal of the transfer transistor is connected to a gate of the amplification transistor.