18492445. SEMICONDUCTOR DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
Contents
SEMICONDUCTOR DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME
Organization Name
Inventor(s)
Ji Young Kim of Hwaseong-si (KR)
Dong-Sik Lee of Hwaseong-si (KR)
Joon-Sung Lim of Seongnam-si (KR)
SEMICONDUCTOR DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 18492445 titled 'SEMICONDUCTOR DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME
Simplified Explanation
The semiconductor device described in the patent application includes a complex structure with multiple gate electrodes and channel holes connected in a specific configuration. The channel structure is located within the channel hole, which is divided into lower, upper, and second sections with varying inclinations of the side walls.
- The semiconductor device includes a substrate, first and second stack structures with multiple gate electrodes, and channel holes connected in a specific configuration.
- The channel structure is located within the channel hole, which is divided into lower, upper, and second sections with varying inclinations of the side walls.
- Potential Applications
- This technology could be applied in the development of advanced semiconductor devices for various electronic applications.
- It may be used in the manufacturing of high-performance transistors for integrated circuits.
- Problems Solved
- Provides a more efficient and precise structure for semiconductor devices.
- Offers improved performance and functionality in electronic devices.
- Benefits
- Enhanced performance and efficiency in semiconductor devices.
- Enables the development of more advanced and complex electronic systems.
Original Abstract Submitted
A semiconductor device includes a substrate, a first stack structure on the substrate and includes a plurality of first gate electrodes, a second stack structure on the first stack structure and includes a plurality of second gate electrodes, a channel hole including a first lower channel hole that extends through a lower portion of the first stack structure, a first upper channel hole connected to the first lower channel hole, and a second channel hole connected to the first upper channel hole, and a channel structure in the channel hole. A side wall of the first lower channel hole has a first inclination relative to the first direction, a side wall of the first upper channel hole has a second inclination relative to the first direction, and a side wall of the second channel hole has a third inclination relative to the first direction.
