18492105. SEMICONDUCTOR MEMORY DEVICE WITH BURIED CONTACTS AND A FENCE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
SEMICONDUCTOR MEMORY DEVICE WITH BURIED CONTACTS AND A FENCE
Organization Name
Inventor(s)
Hyeon Woo Jang of Suwon-si (KR)
Soo Ho Shin of Hwaseong-si (KR)
Dong Sik Park of Suwon-si (KR)
Jong Min Lee of Hwaseong-si (KR)
Ji Hoon Chang of Yongin-si (KR)
SEMICONDUCTOR MEMORY DEVICE WITH BURIED CONTACTS AND A FENCE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18492105 titled 'SEMICONDUCTOR MEMORY DEVICE WITH BURIED CONTACTS AND A FENCE
Simplified Explanation
- Semiconductor memory device with improved element performance and reliability
- Includes a substrate, gate electrode, buried contacts, and fence in a trench between buried contacts
- Fence on gate electrode consists of spacer film on trench side walls and filling film in trench
- Upper surface of spacer film is lower than upper surface of filling film with respect to substrate
Potential Applications
- Semiconductor industry for memory devices
- Electronics manufacturing for improved performance and reliability
Problems Solved
- Enhances element performance in semiconductor memory devices
- Improves reliability of memory devices
Benefits
- Increased performance of semiconductor memory devices
- Enhanced reliability of memory devices
- Improved manufacturing processes for electronics industry
Original Abstract Submitted
The present disclosure provides a semiconductor memory device with improved element performance and reliability. The semiconductor memory device includes a substrate, a gate electrode extending in a first direction in the substrate, a plurality of buried contacts on the substrate, and a fence in a trench between adjacent ones of the buried contacts. The fence is on the gate electrode. The fence includes a spacer film on side walls of the trench and extending in a second direction intersecting the first direction, and a filling film in the trench and on the spacer film. An upper surface of the spacer film is lower than an upper surface of the filling film with respect to the substrate.
