18486789. CONDUCTING BUILT-IN SELF-TEST OF MEMORY MACRO simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
Contents
CONDUCTING BUILT-IN SELF-TEST OF MEMORY MACRO
Organization Name
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
Inventor(s)
CONDUCTING BUILT-IN SELF-TEST OF MEMORY MACRO - A simplified explanation of the abstract
This abstract first appeared for US patent application 18486789 titled 'CONDUCTING BUILT-IN SELF-TEST OF MEMORY MACRO
Simplified Explanation
Performing a built-in self-test (BIST) on a memory macro involves generating input vectors, transmitting them to the memory macro, receiving output data, comparing it with a signature value, and determining if the memory macro is normal or faulty.
- Input vectors are generated and sent to the memory macro in multiple cycles.
- Output data is received from the memory macro in each cycle.
- The output data is compared with a signature value.
- The comparison helps in determining if the memory macro is functioning normally or if there is a fault.
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- Potential Applications
- Testing and verifying the functionality of memory macros in integrated circuits.
- Ensuring the reliability of memory operations in electronic devices.
- Problems Solved
- Detecting faults or abnormalities in memory macros.
- Improving the quality control process during the manufacturing of electronic components.
- Benefits
- Increased reliability of memory operations.
- Efficient testing of memory macros.
- Enhanced quality assurance in the production of electronic devices.
Original Abstract Submitted
Performing a built-in self-test (BIST) on a memory macro includes generating a plurality of input vectors such that at least one input vector of the plurality of input vectors is transmitted to the memory macro in each of a plurality of cycles, receiving in each of the plurality of cycles, an output data from the memory macro. The output data is generated by the memory macro in response to processing the at least one input vector. The BIST also includes comparing the output data in each of the plurality of cycles with a signature value and determining whether the memory macro is normal or faulty based upon the comparison.
