18486148. SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
Contents
SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Joonhee Lee of Seongnam-Si (KR)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18486148 titled 'SEMICONDUCTOR DEVICE
Simplified Explanation
The semiconductor device described in the patent application includes a peripheral circuit region and a memory cell region. The peripheral circuit region has circuit devices and a first wiring structure on a first substrate. The memory cell region has a second substrate with a first region and a second region. The first region contains stacked gate electrodes and channel structures that penetrate the gate electrodes. The second region has a first horizontal conductive layer on the second substrate and an insulating region. There is also a second horizontal conductive layer on the first horizontal conductive layer and the insulating region, as well as a second wiring structure. The device further includes a third wiring structure that connects the first substrate to the second substrate, with an upper via that penetrates the second horizontal conductive layer, the insulating region, and the second substrate, and a lower wiring structure connected to the upper via.
- The patent application describes a semiconductor device with a peripheral circuit region and a memory cell region.
- The peripheral circuit region includes circuit devices and a first wiring structure on a first substrate.
- The memory cell region includes a second substrate with stacked gate electrodes and channel structures in a first region.
- The second region of the memory cell region has a first horizontal conductive layer and an insulating region on the second substrate.
- The device also includes a second horizontal conductive layer, a second wiring structure, and a third wiring structure that connects the first and second substrates.
Potential applications of this technology:
- Memory devices: The described semiconductor device can be used in memory devices, such as flash memory or DRAM, due to its memory cell region.
- Integrated circuits: The peripheral circuit region of the device can be utilized in various integrated circuits, such as microprocessors or digital signal processors.
Problems solved by this technology:
- Integration challenges: The described device addresses the challenge of integrating a peripheral circuit region and a memory cell region on different substrates.
- Wiring complexity: The use of multiple wiring structures and vias simplifies the wiring connections between the first and second substrates.
Benefits of this technology:
- Improved performance: The integration of the peripheral circuit region and memory cell region allows for improved performance and functionality of the semiconductor device.
- Space efficiency: The use of stacked gate electrodes and channel structures in the memory cell region enables higher density memory cells, resulting in space-efficient designs.
Original Abstract Submitted
A semiconductor device includes a peripheral circuit region with a first substrate, circuit devices on the first substrate, and a first wiring structure, a memory cell region with a second substrate that has a first region and a second region, gate electrodes stacked in the first region, channel structures that penetrate the gate electrodes, a first horizontal conductive layer on the second substrate in the first region, an insulating region on the second substrate in the second region, a second horizontal conductive layer on the first horizontal conductive layer and the insulating region, and a second wiring structure, and a third wiring structure that connects the first substrate to the second substrate, and includes an upper via that penetrates the second horizontal conductive layer, the insulating region, and the second substrate, and a lower wiring structure connected to the upper.
