18483884. CONNECTION STRUCTURE AND METHOD OF FORMING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
Contents
CONNECTION STRUCTURE AND METHOD OF FORMING THE SAME
Organization Name
Inventor(s)
CONNECTION STRUCTURE AND METHOD OF FORMING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 18483884 titled 'CONNECTION STRUCTURE AND METHOD OF FORMING THE SAME
Simplified Explanation
The connection structure for a semiconductor package includes:
- A first passivation layer with an opening
- A first conductive pattern that goes through the first passivation layer and protrudes upwardly
- A second passivation layer covering the first conductive pattern
- A second conductive pattern on the second passivation layer, connected to the first conductive pattern
- A third passivation layer covering the second conductive pattern
- An external terminal in the opening, connected to the first conductive pattern, where the first conductive pattern is thicker than the second conductive pattern.
Potential applications of this technology:
- Semiconductor packaging
- Integrated circuits
- Electronic devices
Problems solved by this technology:
- Improved electrical connections
- Enhanced reliability
- Better performance of semiconductor devices
Benefits of this technology:
- Higher efficiency
- Increased durability
- Enhanced functionality
Original Abstract Submitted
Provided is a connection structure for a semiconductor package which includes: a first passivation layer having an opening; a first conductive pattern that penetrates the first passivation layer and protrudes upwardly from the first passivation layer; a second passivation layer on the first passivation layer and covering the first conductive pattern; a second conductive pattern on the second passivation layer and electrically connected to the first conductive pattern; a third passivation layer on the second passivation layer and covering the second conductive pattern; and an external terminal in the opening and electrically connected to the first conductive pattern, wherein the first conductive pattern is thicker than the second conductive pattern.
