18483162. IMAGING ELEMENT, STACKED IMAGING ELEMENT, AND SOLID-STATE IMAGING DEVICE simplified abstract (Sony Group Corporation)
Contents
IMAGING ELEMENT, STACKED IMAGING ELEMENT, AND SOLID-STATE IMAGING DEVICE
Organization Name
Inventor(s)
TOSHIKI Moriwaki of TOKYO (JP)
IMAGING ELEMENT, STACKED IMAGING ELEMENT, AND SOLID-STATE IMAGING DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18483162 titled 'IMAGING ELEMENT, STACKED IMAGING ELEMENT, AND SOLID-STATE IMAGING DEVICE
Simplified Explanation
The imaging element described in the patent application includes a first electrode, a charge accumulation electrode, a photoelectric conversion unit, an insulation layer, and a second electrode.
- The photoelectric conversion unit consists of a photoelectric conversion layer A and an inorganic oxide semiconductor material layer B.
- The inorganic oxide semiconductor material layer B contains indium (In) atoms, tin (Sn) atoms, titanium (Ti) atoms, and zinc (Zn) atoms.
- Potential Applications:**
- Digital cameras
- Medical imaging devices
- Security cameras
- Satellite imaging systems
- Problems Solved:**
- Improved image quality
- Enhanced sensitivity to light
- Reduced noise in imaging
- Benefits:**
- Higher resolution images
- Increased efficiency in capturing light
- Extended lifespan of imaging devices
Original Abstract Submitted
An imaging element includes a first electrode , a charge accumulation electrode disposed apart from the first electrode , a photoelectric conversion unit formed in contact with the first electrode and above the charge accumulation electrode with an insulation layer interposed between the photoelectric conversion unit and the charge accumulation electrode , and a second electrode formed on the photoelectric conversion unit . The photoelectric conversion unit includes a photoelectric conversion layer A and an inorganic oxide semiconductor material layer B disposed in an order of the photoelectric conversion layer A and the inorganic oxide semiconductor material layer B from the second electrode side. The inorganic oxide semiconductor material layer B contains indium (In) atoms, tin (Sn) atoms, titanium (Ti) atoms, and zinc (Zn) atoms.
