18482944. MULTILAYER PACKAGE SUBSTRATE WITH STRESS BUFFER simplified abstract (TEXAS INSTRUMENTS INCORPORATED)
Contents
- 1 MULTILAYER PACKAGE SUBSTRATE WITH STRESS BUFFER
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 MULTILAYER PACKAGE SUBSTRATE WITH STRESS BUFFER - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
MULTILAYER PACKAGE SUBSTRATE WITH STRESS BUFFER
Organization Name
TEXAS INSTRUMENTS INCORPORATED
Inventor(s)
Rajen Manicon Murugan of Dallas TX (US)
MULTILAYER PACKAGE SUBSTRATE WITH STRESS BUFFER - A simplified explanation of the abstract
This abstract first appeared for US patent application 18482944 titled 'MULTILAYER PACKAGE SUBSTRATE WITH STRESS BUFFER
Simplified Explanation
The semiconductor package described in the patent application includes a multilayer package substrate with top and bottom layers, integrated circuit (IC) die with bonding features, and bump stress reduction structures on at least one pin.
- The semiconductor package substrate has a top layer with top dielectric and metal layers, and a bottom layer with bottom dielectric and metal layers.
- The IC die has circuitry on a semiconductor surface, with nodes connected to bond pads with bonding features.
- An electrically conductive material interconnect connects the top side contact pads to the bonding features.
- At least one pin includes bump stress reduction structures with a local physical dimension change of at least 10% in at least one dimension.
Potential Applications
The technology described in the patent application could be applied in various semiconductor packaging applications, such as in consumer electronics, automotive electronics, and industrial equipment.
Problems Solved
This technology helps to reduce stress on the bumps of semiconductor packages, improving reliability and longevity of the devices. It also provides electrical isolation between pins, enhancing overall performance.
Benefits
The bump stress reduction structures help to prevent damage to the semiconductor package during operation, leading to increased durability and stability. The electrical isolation between pins ensures proper functioning of the device.
Potential Commercial Applications
This technology could be utilized in the production of advanced semiconductor packages for a wide range of electronic devices, offering improved performance and reliability.
Possible Prior Art
One possible prior art in semiconductor packaging technology is the use of underfill materials to reduce stress on solder joints in flip-chip packages. Additionally, the use of redistribution layers in semiconductor packages to reroute connections is another common practice in the industry.
Unanswered Questions
How does the bump stress reduction structure impact the overall performance of the semiconductor package?
The article does not provide specific details on the exact effects of the bump stress reduction structure on the performance metrics of the semiconductor package.
What are the specific materials used in the construction of the bump stress reduction structures?
The patent application does not disclose the exact materials used in the bump stress reduction structures, leaving room for further investigation into the composition and properties of these structures.
Original Abstract Submitted
A semiconductor package includes a multilayer package substrate including a top layer including a top dielectric layer and a top metal layer providing a top portion of pins on top filled vias, and a bottom layer including a bottom dielectric layer and a bottom metal layer on bottom filled vias that provide externally accessible bottom side contact pads. The top dielectric layer together with the bottom dielectric layer providing electrical isolation between the pins. And integrated circuit (IC) die that comprises a substrate having a semiconductor surface including circuitry, with nodes connected to bond pads with bonding features on the bond pads. An electrically conductive material interconnect provides a connection between the top side contact pads and the bonding features. At least a first pin includes at least one bump stress reduction structure that includes a local physical dimension change of at least 10% in at least one dimension.
