18482923. STACKED IMAGE SENSORS simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
Contents
STACKED IMAGE SENSORS
Organization Name
Inventor(s)
Jeongsoon Kang of Suwon-si (KR)
Gwideok Ryan Lee of Suwon-si (KR)
STACKED IMAGE SENSORS - A simplified explanation of the abstract
This abstract first appeared for US patent application 18482923 titled 'STACKED IMAGE SENSORS
Simplified Explanation
The stacked image sensor described in the patent application consists of multiple layers of semiconductor substrates and insulating layers. It includes a photoelectric conversion region and a floating diffusion area on the first semiconductor substrate. The first insulating layer, located under the first semiconductor substrate, contains a gate of a transfer transistor. The second semiconductor substrate, located under the first insulating layer, contains first impurities of a first conductivity type and a well region. The second insulating layer, located under the second semiconductor substrate, contains a metal pad of a floating diffusion node and a gate of a source follower transistor. The floating diffusion area and the metal pad of the floating diffusion node are electrically connected through a deep contact that is present in the first insulating layer and the second semiconductor substrate.
- The patent describes a stacked image sensor with improved electrical connections between the floating diffusion area and the metal pad of the floating diffusion node.
- The inclusion of a deep contact in the first insulating layer and the second semiconductor substrate allows for efficient electrical connection between the two components.
- The presence of a well region surrounding the deep contact enhances the performance and functionality of the stacked image sensor.
Potential Applications
- This technology can be used in digital cameras, smartphones, and other imaging devices to improve image quality and sensor performance.
- It can also be applied in surveillance systems, medical imaging devices, and automotive cameras to enhance image capture and processing capabilities.
Problems Solved
- The stacked image sensor addresses the issue of inefficient electrical connections between the floating diffusion area and the metal pad of the floating diffusion node.
- It solves the problem of signal loss and degradation that can occur due to poor electrical connections in traditional image sensors.
- The inclusion of a well region helps in reducing noise and improving the overall performance of the image sensor.
Benefits
- The improved electrical connections provided by the deep contact result in enhanced signal transfer and reduced signal loss, leading to improved image quality.
- The presence of the well region helps in reducing noise and increasing the sensitivity of the image sensor.
- The stacked image sensor offers improved performance and functionality compared to traditional image sensors, making it suitable for various imaging applications.
Original Abstract Submitted
The stacked image sensor includes a first semiconductor substrate and including a photoelectric conversion region and a floating diffusion area, a first insulating layer under the first semiconductor substrate and including a gate of a transfer transistor, a second semiconductor substrate under the first insulating layer and including first impurities of a first conductivity type, and a second insulating layer under the second semiconductor substrate and including a metal pad of a floating diffusion node and a gate of a source follower transistor, wherein the floating diffusion area and the metal pad of the floating diffusion node are electrically connected through a deep contact that is in the first insulating layer and the second semiconductor substrate. The second semiconductor substrate further includes a well region. At least a portion of deep contact may be in the well region. The well region may surround the deep contact.
