18479867. SEMICONDUCTOR ELEMENT AND TERAHERTZ WAVE SYSTEM simplified abstract (CANON KABUSHIKI KAISHA)
Contents
SEMICONDUCTOR ELEMENT AND TERAHERTZ WAVE SYSTEM
Organization Name
Inventor(s)
TAKESHI Yoshioka of Kanagawa (JP)
SEMICONDUCTOR ELEMENT AND TERAHERTZ WAVE SYSTEM - A simplified explanation of the abstract
This abstract first appeared for US patent application 18479867 titled 'SEMICONDUCTOR ELEMENT AND TERAHERTZ WAVE SYSTEM
Simplified Explanation
The semiconductor element described in the patent application is designed for generating or detecting terahertz waves. It includes a substrate, a first electrode, a semiconductor layer with a gain medium for terahertz waves, a dielectric layer, and a second electrode connected to the first electrode through an opening in the dielectric layer. The second electrode has a specific structure with inclined portions and an intermediate portion with a planar terrace.
- Explanation of the patent/innovation:
* Semiconductor element for generating or detecting terahertz waves * Includes substrate, first electrode, semiconductor layer with gain medium, dielectric layer, and second electrode * Second electrode has specific structure with inclined portions and planar terrace in intermediate portion
- Potential applications of this technology:
* Terahertz imaging and spectroscopy * Communication systems * Security screening devices
- Problems solved by this technology:
* Efficient generation and detection of terahertz waves * Improved performance and sensitivity in terahertz applications * Enhanced signal quality and resolution
- Benefits of this technology:
* Higher accuracy and precision in terahertz measurements * Increased data transmission rates in communication systems * Enhanced security screening capabilities
- Potential commercial applications of this technology:
* Medical imaging devices * Wireless communication equipment * Security scanners
- Possible prior art:
* Prior art in terahertz wave generation and detection technologies * Existing semiconductor elements for similar applications
- Unanswered Questions:
- What materials are used in the semiconductor layer for the gain medium?
- Unanswered Questions:
The patent application does not specify the exact materials used in the semiconductor layer for the gain medium. Further research or experimentation may be needed to determine the specific composition.
- How does the specific structure of the second electrode contribute to the performance of the semiconductor element?
While the patent application describes the structure of the second electrode, it does not elaborate on how this design enhances the functionality of the semiconductor element. Additional testing or analysis may be required to fully understand the impact of this structure on the device's performance.
Original Abstract Submitted
A semiconductor element for generating or detecting a terahertz wave is provided. The element includes a substrate, a first electrode, a semiconductor layer disposed between the substrate and the first electrode and including a gain medium for the terahertz wave, a dielectric layer disposed to cover the substrate, and a second electrode disposed on the dielectric layer and connected to the first electrode via an opening provided in the dielectric layer. A portion of the second electrode disposed in the opening includes a first inclined portion, a second inclined portion disposed between the first inclined portion and the first electrode and is less inclined than the first inclined portion, and an intermediate portion connecting the first and second inclined portions. The intermediate portion includes a planar terrace and the terrace is less inclined than the first and second inclined portions.
