18479271. SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)

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SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

Organization Name

SAMSUNG ELECTRONICS CO., LTD.

Inventor(s)

Jungmin Park of Seoul (KR)

Haeryong Kim of Seongnam-si (KR)

Young-Geun Park of Suwon-si (KR)

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 18479271 titled 'SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

Simplified Explanation

The semiconductor device described in the patent application includes a capacitor with a lower electrode, an upper electrode, and a dielectric layer between them. The lower electrode is made up of two metal elements, where the second metal element has a higher work function than the first metal element. The dielectric layer consists of two metal elements as well. The lower electrode is composed of alternating layers of the first metal element and oxygen, while the dielectric layer is in contact with the second layer of the lower electrode.

  • The patent application describes a semiconductor device with a unique capacitor structure.
  • The lower electrode is made up of two metal elements, with the second metal element having a higher work function.
  • The dielectric layer is composed of two metal elements.
  • The lower electrode consists of alternating layers of the first metal element and oxygen.
  • The dielectric layer is in contact with the second layer of the lower electrode.

Potential Applications of this Technology:

  • This semiconductor device can be used in various electronic devices, such as smartphones, tablets, and computers.
  • It can be utilized in memory devices, allowing for higher storage capacity and faster data access.
  • The unique capacitor structure can improve the performance and efficiency of integrated circuits.

Problems Solved by this Technology:

  • The use of two metal elements in the lower electrode with different work functions helps to enhance the performance of the capacitor.
  • The alternating layers of the first metal element and oxygen in the lower electrode provide stability and reliability to the device.
  • The contact between the dielectric layer and the second layer of the lower electrode improves the overall functionality of the semiconductor device.

Benefits of this Technology:

  • Improved performance and efficiency of electronic devices.
  • Higher storage capacity and faster data access in memory devices.
  • Enhanced stability and reliability of the semiconductor device.
  • Potential for advancements in integrated circuit technology.


Original Abstract Submitted

A semiconductor device includes a capacitor including a lower electrode an upper electrode, and a dielectric layer between the lower electrode and the upper electrode. The lower electrode includes ABOwhere ‘A’ is a first metal element and ‘B’ is a second metal element having a work function greater than that of the first metal element. The dielectric layer includes CDOwhere ‘C’ is a third metal element and ‘D’ is a fourth metal element. The lower electrode includes a first layer and a second layer which are alternately and repeatedly stacked. The first layer includes the first metal element and oxygen. The second layer includes the second metal element and oxygen. The dielectric layer is in contact with the lower electrode at a first contact surface the first contact surface corresponding to the second layer.

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