18477964. ELECTRONIC DEVICES WITH IMPURITY GETTERING simplified abstract (Google LLC)
Contents
- 1 ELECTRONIC DEVICES WITH IMPURITY GETTERING
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 ELECTRONIC DEVICES WITH IMPURITY GETTERING - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
ELECTRONIC DEVICES WITH IMPURITY GETTERING
Organization Name
Inventor(s)
Tarek Suwwan De Felipe of Los Altos CA (US)
ELECTRONIC DEVICES WITH IMPURITY GETTERING - A simplified explanation of the abstract
This abstract first appeared for US patent application 18477964 titled 'ELECTRONIC DEVICES WITH IMPURITY GETTERING
Simplified Explanation
The abstract describes an electronic device with a semiconductor structure, a silver-based layer, and a passivation layer made of a II-Nitride material.
- The electronic device includes a semiconductor structure with a doped surface.
- A silver-based layer electrically contacts at least a portion of the doped surface.
- A passivation layer, made of a II-Nitride material, is disposed on a portion of the semiconductor structure.
- A portion of the passivation layer is in physical contact with the Ag-based layer.
Potential Applications
The technology described in this patent application could be used in:
- Semiconductor devices
- Electronic circuits
- Solar panels
Problems Solved
This technology helps in:
- Enhancing the performance of electronic devices
- Improving the reliability of semiconductor structures
- Protecting the doped surface from external factors
Benefits
The benefits of this technology include:
- Increased efficiency in electronic devices
- Longer lifespan of semiconductor structures
- Enhanced stability in various applications
Potential Commercial Applications
The potential commercial applications of this technology could be in:
- Electronics manufacturing industry
- Renewable energy sector
- Semiconductor fabrication companies
Possible Prior Art
One possible prior art could be the use of different passivation layers in semiconductor devices to improve their performance and reliability.
Unanswered Questions
How does this technology compare to existing passivation methods in terms of cost-effectiveness?
This article does not provide information on the cost-effectiveness of this technology compared to other passivation methods. Further research or analysis would be needed to address this question.
What are the environmental implications of using a II-Nitride material in the passivation layer?
The article does not discuss the environmental impact of using a II-Nitride material in the passivation layer. Additional studies or assessments would be required to understand the environmental implications of this technology.
Original Abstract Submitted
In a general aspect, an electronic device includes a semiconductor structure including a doped surface, a silver-based (Ag-based) layer electrically contacting at least a portion of the doped surface and a passivation layer disposed on a portion of the semiconductor structure. A portion of the passivation layer is in physical contact with the Ag-based layer. The passivation layer is a material compound including a II-Nitride material.
