18477434. SURFACE ACOUSTIC WAVE DEVICES WITH LITHIUM NIOBATE PIEZOELECTRIC MATERIAL simplified abstract (SKYWORKS SOLUTIONS, INC.)
Contents
- 1 SURFACE ACOUSTIC WAVE DEVICES WITH LITHIUM NIOBATE PIEZOELECTRIC MATERIAL
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SURFACE ACOUSTIC WAVE DEVICES WITH LITHIUM NIOBATE PIEZOELECTRIC MATERIAL - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
SURFACE ACOUSTIC WAVE DEVICES WITH LITHIUM NIOBATE PIEZOELECTRIC MATERIAL
Organization Name
Inventor(s)
Hironori Fukuhara of Ibaraki-Shi (JP)
Benjamin Paul Abbott of Irvine CA (US)
SURFACE ACOUSTIC WAVE DEVICES WITH LITHIUM NIOBATE PIEZOELECTRIC MATERIAL - A simplified explanation of the abstract
This abstract first appeared for US patent application 18477434 titled 'SURFACE ACOUSTIC WAVE DEVICES WITH LITHIUM NIOBATE PIEZOELECTRIC MATERIAL
Simplified Explanation
The abstract describes an acoustic wave device designed to generate a surface acoustic wave with a specific wavelength, utilizing a substrate, piezoelectric layer, interdigital transducer electrode, overcoat dielectric layer, and raised frame structure.
- The acoustic wave device includes a substrate, piezoelectric layer (lithium niobate), interdigital transducer electrode, overcoat dielectric layer, and raised frame structure.
- The piezoelectric layer is located between the substrate and the interdigital transducer electrode.
- The overcoat dielectric layer is positioned over the interdigital transducer electrode.
- The raised frame structure, made of the same material as the overcoat dielectric layer, is placed within a specific distance from the edge of the active region where the surface acoustic wave is generated.
Potential Applications
The technology can be applied in:
- Wireless communication devices
- Acoustic wave sensors
- Signal processing applications
Problems Solved
- Efficient generation of surface acoustic waves
- Improved performance of acoustic wave devices
- Enhanced signal processing capabilities
Benefits
- High precision in generating surface acoustic waves
- Increased sensitivity in acoustic wave sensors
- Enhanced signal processing efficiency
Potential Commercial Applications
- Mobile phones and other wireless communication devices
- Acoustic wave sensor manufacturers
- Signal processing equipment companies
Possible Prior Art
Prior art in the field of acoustic wave devices may include:
- Research papers on surface acoustic wave generation
- Patents related to piezoelectric materials and interdigital transducer electrodes
Unanswered Questions
How does the raised frame structure impact the performance of the acoustic wave device?
The abstract mentions the raised frame structure but does not elaborate on its specific function or benefits.
What specific materials are used in the trap-rich layer and intervening dielectric layer?
The abstract mentions these layers but does not provide details on the materials used, which could be crucial for understanding the device's performance and characteristics.
Original Abstract Submitted
An acoustic wave device configured to generate a surface acoustic wave having a wavelength L is disclosed. The acoustic wave device can include a substrate, a piezoelectric layer that includes lithium niobate, an interdigital transducer electrode, an overcoat dielectric layer, and/or a raised frame structure. The piezoelectric layer is disposed at least partially between the substrate and the interdigital transducer electrode. The overcoat dielectric layer is positioned over the interdigital transducer electrode. The raised frame structure is positioned over the overcoat dielectric layer. The raised frame structure includes a material of the overcoat dielectric layer. The raised frame structure is positioned in an edge region within 0.25 L and 0.45 L from an edge of an active region where the surface acoustic wave is generated. The acoustic wave device can include a trap-rich layer over the substrate and an intervening dielectric layer over the trap-rich layer.
