18476910. SEMICONDUCTOR DEVICE simplified abstract (Japan Display Inc.)
Contents
- 1 SEMICONDUCTOR DEVICE
SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Toshinari Sasaki of Tokyo (JP)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18476910 titled 'SEMICONDUCTOR DEVICE
Simplified Explanation
The method described in the patent application involves manufacturing a semiconductor device by forming various layers above a substrate and then performing a heat treatment to achieve the desired properties. Here are the key points of the innovation:
- Forming an oxide semiconductor layer above a substrate
- Forming a gate insulating layer above the oxide semiconductor layer
- Forming a metal oxide layer containing aluminum above the gate insulating layer
- Performing a heat treatment with the metal oxide layer in place
- Removing the metal oxide layer after the heat treatment
- Forming a gate electrode above the gate insulating layer
Potential Applications
The technology described in this patent application could be applied in the manufacturing of advanced semiconductor devices, such as transistors and integrated circuits.
Problems Solved
This method offers a way to improve the performance and reliability of semiconductor devices by optimizing the structure and properties of the various layers involved in their fabrication.
Benefits
The benefits of this technology include enhanced device performance, increased efficiency, and potentially lower production costs for semiconductor manufacturers.
Potential Commercial Applications
The innovative method outlined in this patent application could find commercial applications in the semiconductor industry for the production of high-performance electronic devices.
Possible Prior Art
One possible prior art related to this technology could be the use of metal oxide layers in semiconductor device manufacturing processes. However, the specific combination of layers and the heat treatment process described in this patent application may represent a novel approach.
Unanswered Questions
How does this method compare to existing techniques for semiconductor device manufacturing?
This article does not provide a direct comparison with existing techniques, so it is unclear how this method stands out in terms of efficiency, cost-effectiveness, or performance improvements.
What are the specific properties of the metal oxide layer that make it suitable for this application?
The article does not delve into the specific characteristics or properties of the metal oxide layer containing aluminum, leaving a gap in understanding the rationale behind its selection for this process.
Original Abstract Submitted
A method for manufacturing semiconductor device according to an embodiment includes: forming an oxide semiconductor layer above a substrate; forming a gate insulating layer above the oxide semiconductor layer; forming a metal oxide layer containing aluminum as a main component above the gate insulating layer; performing a heat treatment in a state where the metal oxide layer is formed above the gate insulating layer; removing the metal oxide layer after the heat treatment; and forming a gate electrode above the gate insulating layer.
