18476776. SOLID-STATE IMAGE PICKUP APPARATUS AND ELECTRONIC EQUIPMENT simplified abstract (SONY SEMICONDUCTOR SOLUTIONS CORPORATION)
Contents
- 1 SOLID-STATE IMAGE PICKUP APPARATUS AND ELECTRONIC EQUIPMENT
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SOLID-STATE IMAGE PICKUP APPARATUS AND ELECTRONIC EQUIPMENT - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
SOLID-STATE IMAGE PICKUP APPARATUS AND ELECTRONIC EQUIPMENT
Organization Name
SONY SEMICONDUCTOR SOLUTIONS CORPORATION
Inventor(s)
HIROKAZU Ejiri of KANAGAWA (JP)
SOLID-STATE IMAGE PICKUP APPARATUS AND ELECTRONIC EQUIPMENT - A simplified explanation of the abstract
This abstract first appeared for US patent application 18476776 titled 'SOLID-STATE IMAGE PICKUP APPARATUS AND ELECTRONIC EQUIPMENT
Simplified Explanation
The abstract describes a solid-state image pickup apparatus that includes a photoelectric conversion section, a transfer section with a V-NW transistor, and an accumulation section with a wiring layer connected to the transfer section to accumulate charge transferred by the transfer section.
- Photoelectric conversion section generates and holds charge in response to incident light.
- Transfer section includes a V-NW transistor to transfer the charge held in the photoelectric conversion section.
- Accumulation section includes a wiring layer connected to the transfer section's drain and accumulates the transferred charge.
- Applicable to a CMOS image sensor.
Potential Applications
The technology can be used in digital cameras, smartphones, surveillance systems, and medical imaging devices.
Problems Solved
Improves image quality, reduces noise, enhances low-light performance, and increases overall efficiency of image sensors.
Benefits
Higher quality images, improved performance in various lighting conditions, reduced power consumption, and enhanced functionality in compact devices.
Potential Commercial Applications
Potential commercial applications include consumer electronics, security systems, medical imaging equipment, and industrial inspection devices.
Possible Prior Art
Prior art may include patents related to image sensor technologies, CMOS sensors, and semiconductor devices.
Unanswered Questions
How does the V-NW transistor improve charge transfer efficiency in the image sensor?
The abstract mentions the use of a V-NW transistor in the transfer section, but it does not elaborate on how this specific transistor design enhances charge transfer efficiency.
What are the specific technical specifications of the wiring layer in the accumulation section?
The abstract mentions a wiring layer in the accumulation section, but it does not provide details on the material, thickness, or other technical specifications of this component.
Original Abstract Submitted
A solid-state image pickup apparatus according to a first aspect of the present technology includes a photoelectric conversion section that generates and holds a charge in response to incident light, a transfer section that includes a V-NW transistor (Vertical Nano Wire transistor) and transfers the charge held in the photoelectric conversion section, and an accumulation section that includes a wiring layer connected to a drain of the transfer section including the V-NW transistor and accumulates the charge transferred by the transfer section. The present technology is applicable to a CMOS image sensor, for example.
