18475812. SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)

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SEMICONDUCTOR DEVICE

Organization Name

SAMSUNG ELECTRONICS CO., LTD.

Inventor(s)

Jaecheon Yong of Suwon-si (KR)

Daehong Ko of Seoul (KR)

SEMICONDUCTOR DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 18475812 titled 'SEMICONDUCTOR DEVICE

Simplified Explanation

The semiconductor device described in the abstract includes a substrate with semiconductor patterns, gate patterns, and a landing pattern. The landing pattern is connected to the gate patterns and includes a semiconductor material layer and a conductive material layer.

  • The semiconductor device has semiconductor patterns on the substrate, with gate patterns surrounding them.
  • The landing pattern, located on a different region of the substrate, is electrically connected to the gate patterns and includes semiconductor and conductive material layers.

Potential Applications

The technology described in this patent application could be applied in the following areas:

  • Semiconductor manufacturing
  • Integrated circuit design
  • Electronics industry

Problems Solved

This technology helps address the following issues:

  • Enhancing the performance of semiconductor devices
  • Improving the efficiency of electronic components
  • Facilitating the production of complex integrated circuits

Benefits

The semiconductor device outlined in this patent application offers the following benefits:

  • Increased functionality and performance
  • Enhanced reliability and durability
  • Simplified manufacturing processes

Potential Commercial Applications

The potential commercial applications of this technology could include:

  • Semiconductor fabrication companies
  • Electronics manufacturers
  • Research and development firms

Possible Prior Art

One possible prior art for this technology could be the use of landing patterns in semiconductor devices to improve connectivity and performance.

Unanswered Questions

How does this technology compare to existing semiconductor devices in terms of performance and efficiency?

This article does not provide a direct comparison with existing semiconductor devices in terms of performance and efficiency. Further research or testing may be needed to evaluate the technology's advantages over current solutions.

What are the specific materials used in the semiconductor and conductive layers of the landing pattern?

The article mentions the presence of semiconductor and conductive material layers in the landing pattern but does not specify the exact materials used. Additional information on the composition of these layers could provide insights into the technology's properties and applications.


Original Abstract Submitted

A semiconductor device includes a substrate having first and second regions, semiconductor patterns spaced apart from each other in a first horizontal direction on the first region, wherein each of the semiconductor patterns has first side surfaces opposing each other in the first horizontal direction and second side surfaces opposing each other in a second horizontal direction, the first and second horizontal directions parallel to an upper surface of the substrate, the second horizontal direction perpendicular to the first horizontal direction, gate patterns surrounding an upper surface, a lower surface, and the first side surfaces of each of the semiconductor patterns, and a landing pattern spaced apart from the semiconductor patterns in the first horizontal direction on the second region and electrically connected to the gate patterns. The landing pattern includes a semiconductor material layer and a conductive material layer covering at least one surface of the semiconductor material layer.