18474307. SEMICONDUCTOR MEMORY DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
Contents
- 1 SEMICONDUCTOR MEMORY DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SEMICONDUCTOR MEMORY DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
SEMICONDUCTOR MEMORY DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME
Organization Name
Inventor(s)
SEMICONDUCTOR MEMORY DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 18474307 titled 'SEMICONDUCTOR MEMORY DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME
Simplified Explanation
The semiconductor memory device described in the abstract includes a substrate with a first region containing a peripheral circuit and a first active region (FAR), and a second region containing memory cell blocks. The FAR has extensions in different directions forming an angle greater than 90 degrees, and a first pass transistor circuit is configured to transmit driving signals.
- The semiconductor memory device has a substrate with distinct regions for different functions, such as peripheral circuit, active region, and memory cell blocks.
- The FAR of the device has extensions in different directions, allowing for efficient transmission of driving signals through the first pass transistor circuit.
Potential Applications
This technology could be applied in various memory devices, such as solid-state drives, mobile devices, and computer systems.
Problems Solved
This technology solves the problem of efficiently transmitting driving signals in a semiconductor memory device with distinct regions and extensions.
Benefits
The benefits of this technology include improved performance, efficiency, and reliability in semiconductor memory devices.
Potential Commercial Applications
The potential commercial applications of this technology include the production of high-performance memory devices for consumer electronics, data storage systems, and computing devices.
Possible Prior Art
One possible prior art for this technology could be semiconductor memory devices with similar structures and configurations, but without the specific features of the FAR extensions forming an angle greater than 90 degrees.
What is the manufacturing process for this semiconductor memory device?
The abstract does not provide details on the manufacturing process for this semiconductor memory device. It would be interesting to know how the FAR extensions are precisely fabricated and integrated into the device.
How does the angle formed by the FAR extensions impact the performance of the device?
The abstract mentions that the FAR extensions form an angle greater than 90 degrees, but it does not explain how this specific angle affects the functionality or efficiency of the device. Further information on this aspect would be beneficial for understanding the technology better.
Original Abstract Submitted
A semiconductor memory device includes: a substrate including a first region and a second region, the first region includes a peripheral circuit and a first active region (FAR), and the second region includes memory cell blocks. The FAR includes a FAR first extension extending in a first direction, a FAR second extension extending in a second direction, and a FAR third extension extending in a third direction. The FAR first extension, the FAR second extension, and the FAR third extension form an angle greater than 90 degrees relative to one another. The device includes a first pass transistor circuit configured to transmit driving signals, and the first pass transistor circuit includes a FAR first gate structure on the FAR first extension, a FAR second gate structure on the FAR second extension, a FAR third gate structure on the FAR third extension, and a first shared source/drain.
