18473412. SEMICONDUCTOR DEVICES simplified abstract (Samsung Electronics Co., Ltd.)

From WikiPatents
Jump to navigation Jump to search

SEMICONDUCTOR DEVICES

Organization Name

Samsung Electronics Co., Ltd.

Inventor(s)

Gyu-Hwan Ahn of Gunpo-si (KR)

Sung-Soo Kim of Hwaseong-si (KR)

Chae-Ho Na of Changwon-si (KR)

Dong-Hyun Roh of Suwon-si (KR)

Sang-Jin Hyun of Suwon-si (KR)

SEMICONDUCTOR DEVICES - A simplified explanation of the abstract

This abstract first appeared for US patent application 18473412 titled 'SEMICONDUCTOR DEVICES

Simplified Explanation

The abstract of the patent application describes a semiconductor device that includes active fins on a substrate. The device also includes various isolation patterns that help in the electrical isolation of different components within the device.

  • The first isolation pattern extends on the lower sidewall of each active fin, providing isolation between the fins.
  • The third isolation pattern has an upper portion that extends into the first isolation pattern and a lower portion that extends into the upper portion of the substrate. The lower portion of the third isolation pattern contacts the upper portion of the third isolation pattern and has a wider lower surface compared to its upper surface.
  • The second isolation pattern extends in the substrate under the third isolation pattern, contacting the third isolation pattern, and has a rounded lower surface.

Potential Applications:

  • This semiconductor device can be used in various electronic devices such as smartphones, tablets, and computers.
  • It can be utilized in high-performance computing systems, data centers, and other advanced computing applications.

Problems Solved:

  • The active fins and isolation patterns help in improving the performance and efficiency of the semiconductor device.
  • The isolation patterns ensure proper electrical isolation between different components, reducing interference and improving overall device functionality.

Benefits:

  • The active fins and isolation patterns enhance the performance and speed of the semiconductor device.
  • Improved electrical isolation leads to better signal integrity and reduced power consumption.
  • The rounded lower surface of the second isolation pattern helps in reducing stress and improving the reliability of the device.

Potential Applications

  • Electronic devices (smartphones, tablets, computers)
  • High-performance computing systems
  • Data centers
  • Advanced computing applications

Problems Solved

  • Improved performance and efficiency of the semiconductor device
  • Proper electrical isolation between components, reducing interference
  • Enhanced signal integrity and reduced power consumption

Benefits

  • Increased performance and speed
  • Better signal integrity
  • Reduced power consumption
  • Improved reliability


Original Abstract Submitted

A semiconductor device includes active fins on a substrate, a first isolation pattern on the substrate, the first isolation pattern extending on a lower sidewall of each of the active fins, a third isolation pattern including an upper portion extending into the first isolation pattern and a lower portion extending into an upper portion of the substrate, the lower portion contacting the upper portion of the third isolation pattern, and having a lower surface with a width greater than that of an upper surface thereof, and a second isolation pattern extending in the substrate under the third isolation pattern, contacting the third isolation pattern, and having a rounded lower surface.