18471002. SUBSTRATE PROCESSING APPARATUS, PLASMA GENERATION APPARATUS, METHOD OF PROCESSING SUBSTRATE, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND RECORDING MEDIUM simplified abstract (Kokusai Electric Corporation)
Contents
- 1 SUBSTRATE PROCESSING APPARATUS, PLASMA GENERATION APPARATUS, METHOD OF PROCESSING SUBSTRATE, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND RECORDING MEDIUM
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SUBSTRATE PROCESSING APPARATUS, PLASMA GENERATION APPARATUS, METHOD OF PROCESSING SUBSTRATE, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND RECORDING MEDIUM - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
SUBSTRATE PROCESSING APPARATUS, PLASMA GENERATION APPARATUS, METHOD OF PROCESSING SUBSTRATE, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND RECORDING MEDIUM
Organization Name
Inventor(s)
Yukinori Aburatani of Toyama-shi (JP)
Kaoru Yamamoto of Toyama-shi (JP)
SUBSTRATE PROCESSING APPARATUS, PLASMA GENERATION APPARATUS, METHOD OF PROCESSING SUBSTRATE, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND RECORDING MEDIUM - A simplified explanation of the abstract
This abstract first appeared for US patent application 18471002 titled 'SUBSTRATE PROCESSING APPARATUS, PLASMA GENERATION APPARATUS, METHOD OF PROCESSING SUBSTRATE, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND RECORDING MEDIUM
Simplified Explanation
The abstract describes a patent application for a technique involving a process chamber and a plasma generator to process substrates using generated plasma.
- The technique involves a process chamber designed to process multiple substrates.
- A plasma generator is used to create plasma within the process chamber.
- The plasma generator includes a first electrode extending from the lower side to the intermediate side of the chamber, and a second electrode extending from the upper side to the intermediate side.
Potential Applications
This technology could be applied in semiconductor manufacturing, surface treatment processes, and thin film deposition.
Problems Solved
This innovation helps in improving the efficiency and uniformity of plasma processing on multiple substrates simultaneously.
Benefits
The technique allows for more consistent and controlled plasma processing, leading to higher quality and more reliable end products.
Potential Commercial Applications
"Plasma Processing System for Substrate Treatment" - Optimizing plasma processing for various industries.
Possible Prior Art
There may be prior art related to plasma generators and process chambers in the field of semiconductor manufacturing and materials processing.
Unanswered Questions
How does this technique compare to existing plasma processing systems in terms of throughput and quality control?
This article does not provide a direct comparison with existing systems in terms of throughput and quality control.
What are the specific industries or applications where this technology is expected to have the most impact?
The article does not specify the specific industries or applications where this technology is expected to have the most impact.
Original Abstract Submitted
There is provided a technique that includes: a process chamber configured to process a plurality of substrates; and a plasma generator configured to generate plasma in the process chamber, the plasma generator including a first electrode part configured to extend from a lower side to an intermediate side of the process chamber, and a second electrode part configured to extend from an upper side to the intermediate side of the process chamber.
