18469601. SEMICONDUCTOR APPARATUS AND MANUFACTURING METHOD OF SEMICONDUCTOR APPARATUS simplified abstract (KABUSHIKI KAISHA TOSHIBA)
Contents
SEMICONDUCTOR APPARATUS AND MANUFACTURING METHOD OF SEMICONDUCTOR APPARATUS
Organization Name
Inventor(s)
Yuta Sugimoto of Kawasaki (JP)
SEMICONDUCTOR APPARATUS AND MANUFACTURING METHOD OF SEMICONDUCTOR APPARATUS - A simplified explanation of the abstract
This abstract first appeared for US patent application 18469601 titled 'SEMICONDUCTOR APPARATUS AND MANUFACTURING METHOD OF SEMICONDUCTOR APPARATUS
Simplified Explanation
The manufacturing method of a semiconductor apparatus described in the abstract involves several key steps:
- Forming an electrode on a first main surface of a compound semiconductor substrate.
- Creating a via hole at the location of the electrode, penetrating both the first and second main surfaces of the substrate.
- Ensuring that the ratio of the substrate thickness to the maximum width of the opening in the second main surface is greater than 1.
- Adding a rear-side electrode on the second main surface, electrically connected to the electrode in the via hole.
- Applying an insulating layer above the opening.
- Placing a solder layer above the rear-side electrode and insulating layer.
Potential Applications: - This manufacturing method can be applied in the production of various semiconductor devices, such as solar cells, LEDs, and transistors.
Problems Solved: - This method allows for efficient electrical coupling between electrodes on different surfaces of a semiconductor substrate, improving device performance and reliability.
Benefits: - Enhanced electrical connectivity and thermal management in semiconductor devices. - Increased efficiency and durability of the devices produced using this method.
Potential Commercial Applications: - Solar cell manufacturing for renewable energy applications. - LED production for lighting and display technologies.
Possible Prior Art: - Prior methods of forming electrodes on compound semiconductor substrates may not have addressed the specific requirements outlined in this patent application.
Unanswered Questions: 1. How does the thickness of the semiconductor substrate affect the performance of the device? 2. Are there any specific challenges in scaling up this manufacturing method for mass production?
Original Abstract Submitted
A manufacturing method of a semiconductor apparatus according to an embodiment includes forming an electrode on a first main surface of a semiconductor substrate made from a compound semiconductor; forming, at a location where the electrode is formed, a via hole that penetrates the first main surface and a second main surface of the semiconductor substrate, wherein a ratio of a thickness of the semiconductor substrate to a maximum value of a width of an opening in the second main surface is greater than 1; forming a rear-side electrode on a second main surface of the semiconductor substrate in such a manner that the rear-side electrode is electrically coupled to the electrode in the via hole; forming an insulating layer arranged at least a layer above the opening; and forming a solder layer in a layer above the rear-side electrode and the insulating layer.
