18469208. METHODS OF PROCESSING SUBSTRATES AND APPARATUSES THEREOF simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)

METHODS OF PROCESSING SUBSTRATES AND APPARATUSES THEREOF

Organization Name

SAMSUNG ELECTRONICS CO., LTD.

Inventor(s)

Changheon Lee of Hwaseong-si (KR)

Sangki Nam of Seongnam-si (KR)

Taesun Shin of Hwaseong-si (KR)

METHODS OF PROCESSING SUBSTRATES AND APPARATUSES THEREOF - A simplified explanation of the abstract

This abstract first appeared for US patent application 18469208 titled 'METHODS OF PROCESSING SUBSTRATES AND APPARATUSES THEREOF

Simplified Explanation

The patent application describes a method for processing a substrate using plasma-based etching. The method involves inserting the substrate into a processing space, supplying a process gas to the space, generating plasma from the gas, and using the ions in the plasma to etch the substrate. The processed gas is then discharged through a discharge part, which includes a first slit extending through a flange part and a second slit connected to the first slit through a side wall part. The first and second slits have equal vertical lengths, and the horizontal length of the first slit is 5 to 7 times its vertical length.

• The method involves inserting a substrate into a processing space and supplying a process gas to generate plasma for etching.
• The plasma-based etching process uses ions from the plasma to etch the substrate.
• The processed gas is discharged through a discharge part, which includes a first and second slit with equal vertical lengths.
• The horizontal length of the first slit is 5 to 7 times its vertical length.

Potential Applications:

• Semiconductor manufacturing: This method can be used for etching substrates in the production of semiconductor devices.
• Display panel manufacturing: The method can be applied in the fabrication of display panels, such as LCD or OLED screens.
• Microelectromechanical systems (MEMS): The technology can be utilized in the production of MEMS devices, which require precise etching processes.

Problems Solved:

• Efficient etching: The method provides a way to efficiently etch substrates using plasma-based processes.
• Controlled discharge: The design of the discharge part ensures proper discharge of the processed gas.

Benefits:

• Improved etching performance: The use of plasma-based etching with ions enhances the etching process, resulting in better substrate processing.
• Enhanced discharge efficiency: The design of the discharge part allows for efficient and controlled discharge of the processed gas.
• Versatile applications: The method can be applied in various industries, including semiconductor manufacturing, display panel production, and MEMS fabrication.

Original Abstract Submitted

A substrate processing method includes inserting a substrate from an outside into a processing space, supplying a process gas from a gas supply unit to the processing space, producing plasma based on the process gas, performing an etching process for the substrate using ions included in the plasma, and discharging a processed gas produced in the etching process through a discharge part. The discharge part includes a first slit extending through a flange part, and a second slit connected to the first slit while extending through a side wall part connected to the flange part. A vertical length of the first slit is equal to a vertical length of the second slit. A horizontal length of the first slit is about 5 times to about 7 times the vertical length of the first slit.