View source for 18468551. SEMICONDUCTOR DEVICE HAVING STACKED STRUCTURE AND METHOD FOR MANUFACTURING THE SAME simplified abstract (SK hynix Inc.)

=SEMICONDUCTOR DEVICE HAVING STACKED STRUCTURE AND METHOD FOR MANUFACTURING THE SAME=


==Organization Name==

[[:Category:SK hynix Inc.|SK hynix Inc.]]


[[Category:SK hynix Inc.]]

==Inventor(s)==

[[:Category:Won Je Park of Icheon-si (KR)|Won Je Park of Icheon-si (KR)]][[Category:Won Je Park of Icheon-si (KR)]]

==SEMICONDUCTOR DEVICE HAVING STACKED STRUCTURE AND METHOD FOR MANUFACTURING THE SAME - A simplified explanation of the abstract==


This abstract first appeared for US patent application 18468551 titled 'SEMICONDUCTOR DEVICE HAVING STACKED STRUCTURE AND METHOD FOR MANUFACTURING THE SAME

==Simplified Explanation==

The semiconductor device described in the abstract consists of multiple stacked structures with various substrates, interconnect layers, conductive lines, circuit elements, and interconnection via structures. The device also includes a pad open region outside of the pixel region, exposing the electrode pad's top surface to the outside.

* The semiconductor device comprises stacked structures with substrates, interconnect layers, and circuit elements.
* The device features interconnection via structures penetrating substrates and conductive lines connecting various components.
* A pad open region is included outside the pixel region, exposing the electrode pad's top surface.

== Potential Applications ==
The technology described in this semiconductor device could be applied in:
* Display panels
* Image sensors
* Integrated circuits

== Problems Solved ==
This technology addresses the following issues:
* Efficient signal processing
* Improved interconnection reliability
* Enhanced device performance

== Benefits ==
The benefits of this semiconductor device include:
* Higher integration density
* Enhanced signal processing capabilities
* Improved overall device reliability

== Potential Commercial Applications ==
The potential commercial applications of this technology could be in:
* Consumer electronics
* Automotive displays
* Medical imaging devices

== Possible Prior Art ==
One possible prior art for this technology could be:
* Stacked semiconductor devices with interconnection via structures

=== Unanswered Questions ===

=== How does this technology compare to traditional semiconductor devices in terms of performance and reliability? ===
This article does not provide a direct comparison between this technology and traditional semiconductor devices. It would be beneficial to understand the specific advantages and disadvantages of this innovation compared to existing solutions.


==Original Abstract Submitted==

A semiconductor device includes a first stacked structure including a first substrate having unit pixels, and a first interconnect layer having first conductive lines connected to the unit pixels; a second stacked structure including a second substrate having first circuit elements configured to operate the unit pixels and a second interconnect layer having second conductive lines connected to the first circuit elements and an electrode pad, and a first interconnection via structure penetrating the second substrate; a third stacked structure including a third substrate having second circuit elements configured to process signals received from the second stacked structure, and a third interconnect layer having third conductive lines connected to the second circuit elements; and a pad open region disposed outside of a pixel region including the unit pixels and exposing a top surface of the electrode pad to outside.



[[Category:H01L27/146]]