18468551. SEMICONDUCTOR DEVICE HAVING STACKED STRUCTURE AND METHOD FOR MANUFACTURING THE SAME simplified abstract (SK hynix Inc.)

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SEMICONDUCTOR DEVICE HAVING STACKED STRUCTURE AND METHOD FOR MANUFACTURING THE SAME

Organization Name

SK hynix Inc.

Inventor(s)

Won Je Park of Icheon-si (KR)

SEMICONDUCTOR DEVICE HAVING STACKED STRUCTURE AND METHOD FOR MANUFACTURING THE SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 18468551 titled 'SEMICONDUCTOR DEVICE HAVING STACKED STRUCTURE AND METHOD FOR MANUFACTURING THE SAME

Simplified Explanation

The semiconductor device described in the abstract consists of multiple stacked structures with various substrates, interconnect layers, conductive lines, circuit elements, and interconnection via structures. The device also includes a pad open region outside of the pixel region, exposing the electrode pad's top surface to the outside.

  • The semiconductor device comprises stacked structures with substrates, interconnect layers, and circuit elements.
  • The device features interconnection via structures penetrating substrates and conductive lines connecting various components.
  • A pad open region is included outside the pixel region, exposing the electrode pad's top surface.

Potential Applications

The technology described in this semiconductor device could be applied in:

  • Display panels
  • Image sensors
  • Integrated circuits

Problems Solved

This technology addresses the following issues:

  • Efficient signal processing
  • Improved interconnection reliability
  • Enhanced device performance

Benefits

The benefits of this semiconductor device include:

  • Higher integration density
  • Enhanced signal processing capabilities
  • Improved overall device reliability

Potential Commercial Applications

The potential commercial applications of this technology could be in:

  • Consumer electronics
  • Automotive displays
  • Medical imaging devices

Possible Prior Art

One possible prior art for this technology could be:

  • Stacked semiconductor devices with interconnection via structures

Unanswered Questions

How does this technology compare to traditional semiconductor devices in terms of performance and reliability?

This article does not provide a direct comparison between this technology and traditional semiconductor devices. It would be beneficial to understand the specific advantages and disadvantages of this innovation compared to existing solutions.


Original Abstract Submitted

A semiconductor device includes a first stacked structure including a first substrate having unit pixels, and a first interconnect layer having first conductive lines connected to the unit pixels; a second stacked structure including a second substrate having first circuit elements configured to operate the unit pixels and a second interconnect layer having second conductive lines connected to the first circuit elements and an electrode pad, and a first interconnection via structure penetrating the second substrate; a third stacked structure including a third substrate having second circuit elements configured to process signals received from the second stacked structure, and a third interconnect layer having third conductive lines connected to the second circuit elements; and a pad open region disposed outside of a pixel region including the unit pixels and exposing a top surface of the electrode pad to outside.