18468038. IMAGE SENSORS WITH LIGHT CHANNELING REFLECTIVE LAYERS THEREIN simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
Contents
IMAGE SENSORS WITH LIGHT CHANNELING REFLECTIVE LAYERS THEREIN
Organization Name
Inventor(s)
Hyuk Soon Choi of Hwaseong-si (KR)
IMAGE SENSORS WITH LIGHT CHANNELING REFLECTIVE LAYERS THEREIN - A simplified explanation of the abstract
This abstract first appeared for US patent application 18468038 titled 'IMAGE SENSORS WITH LIGHT CHANNELING REFLECTIVE LAYERS THEREIN
Simplified Explanation
The abstract describes an image sensor that consists of a two-dimensional array of image sensor pixels formed in a semiconductor layer. Each pixel has a semiconductor region containing at least two photoelectric conversion elements. The semiconductor region is partially separated by an electrically insulating isolation region. Additionally, there is at least one optically reflective region surrounding a portion of the photoelectric conversion elements. A semiconductor floating diffusion region is provided within the semiconductor region.
- The image sensor includes a two-dimensional array of image sensor pixels.
- Each pixel has at least two photoelectric conversion elements.
- The pixels are formed in a semiconductor layer.
- The semiconductor region containing the photoelectric conversion elements is partially separated by an electrically insulating isolation region.
- There is at least one optically reflective region surrounding a portion of the photoelectric conversion elements.
- A semiconductor floating diffusion region is provided within the semiconductor region.
Potential applications of this technology:
- Digital cameras and camcorders
- Mobile devices with built-in cameras
- Surveillance systems
- Medical imaging devices
- Automotive cameras for advanced driver assistance systems
Problems solved by this technology:
- Improved image quality and sensitivity
- Reduction of cross-talk between pixels
- Enhanced dynamic range
- Reduction of noise and artifacts in captured images
Benefits of this technology:
- Higher resolution and image detail
- Improved low-light performance
- Enhanced color accuracy
- More accurate and reliable image capture
- Enables advanced imaging features and functionalities
Original Abstract Submitted
An image sensor includes a two-dimensional array of image sensor pixels, which are formed in a semiconductor layer. Each image sensor pixel is formed in a substrate having a corresponding semiconductor region therein. Each semiconductor region contains at least first and second photoelectric conversion elements, which are disposed at side-by-side locations therein. An electrically insulating isolation region is also provided, which extends at least partially through the semiconductor region and at least partially between the first and second photoelectric conversion elements, which may be configured respectively as first and second semiconductor regions of first conductivity type (e.g., N-type). At least one optically reflective region is also provided, which extends at least partially through the semiconductor region and surrounds at least a portion of at least one of the first and second photoelectric conversion elements. A semiconductor floating diffusion (FD) region (e.g., N-type region) is provided within the semiconductor region.
