18465439. METHOD OF MANUFACTURING METAL NITRIDE FILM AND ELECTRONIC DEVICE INCLUDING METAL NITRIDE FILM simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
Contents
METHOD OF MANUFACTURING METAL NITRIDE FILM AND ELECTRONIC DEVICE INCLUDING METAL NITRIDE FILM
Organization Name
Inventor(s)
Jeonggyu Song of Seongnam-si (KR)
Haeryong Kim of Seongnam-si (KR)
METHOD OF MANUFACTURING METAL NITRIDE FILM AND ELECTRONIC DEVICE INCLUDING METAL NITRIDE FILM - A simplified explanation of the abstract
This abstract first appeared for US patent application 18465439 titled 'METHOD OF MANUFACTURING METAL NITRIDE FILM AND ELECTRONIC DEVICE INCLUDING METAL NITRIDE FILM
Simplified Explanation
The abstract describes a capacitor design that includes a metal nitride lower electrode, a dielectric layer, an interfacial layer with a metal nitrate, and an upper electrode.
- The capacitor includes a metal nitride lower electrode (MM′N) and an upper electrode on a dielectric layer.
- An interfacial layer between the lower electrode and the dielectric layer includes a metal nitrate (MM′ON).
- The metal nitride and metal nitrate compositions provide specific properties to the capacitor design.
Potential Applications
- Capacitors are widely used in electronic devices, making this innovation applicable to various industries such as consumer electronics, telecommunications, and automotive.
- The specific composition of the capacitor may have potential applications in high-performance devices, energy storage systems, and integrated circuits.
Problems Solved
- The design of this capacitor addresses the need for improved performance and efficiency in electronic devices.
- The use of metal nitride and metal nitrate compositions may solve issues related to capacitance, dielectric breakdown, and reliability.
Benefits
- The specific composition of the capacitor may offer enhanced capacitance, allowing for increased energy storage capacity.
- The interfacial layer with a metal nitrate may improve the stability and reliability of the capacitor.
- The design may lead to improved performance and efficiency in electronic devices, resulting in better overall device functionality.
Original Abstract Submitted
A capacitor includes: a lower electrode including a metal nitride represented by MM′N, wherein M is a metal element, M′ is an element different from M, and N is nitrogen; a dielectric layer on the lower electrode; an interfacial layer between the lower electrode and the dielectric layer and including a metal nitrate represented by MM′ON, wherein M is a metal element, M′ is an element different from M, N is nitrogen, and O is oxygen; and an upper electrode on the dielectric layer.
