18465244. SEMICONDUCTOR MEMORY DEVICE simplified abstract (Kioxia Corporation)
Contents
- 1 SEMICONDUCTOR MEMORY DEVICE
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SEMICONDUCTOR MEMORY DEVICE - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 How does this technology compare to existing memory device designs in terms of speed and efficiency?
- 1.11 What are the specific manufacturing processes involved in implementing this technology in semiconductor memory devices?
- 1.12 Original Abstract Submitted
SEMICONDUCTOR MEMORY DEVICE
Organization Name
Inventor(s)
Toshiaki Sato of Yokohama (JP)
SEMICONDUCTOR MEMORY DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18465244 titled 'SEMICONDUCTOR MEMORY DEVICE
Simplified Explanation
The semiconductor memory device described in the abstract includes multiple sense amplifier regions, a first wiring layer with multiple bit lines connected to semiconductor layers, and a second wiring layer with first wirings connecting the sense amplifier regions to the bit lines. The device also features a semiconductor substrate with first and second regions arranged in a specific direction, with first wirings arranged in a third direction overlapping with the sense amplifier regions in each region.
- The semiconductor memory device includes multiple sense amplifier regions for efficient data retrieval and processing.
- The device utilizes a first wiring layer with multiple bit lines connected to semiconductor layers for data storage.
- A second wiring layer with first wirings connects the sense amplifier regions to the bit lines for data transfer.
- The arrangement of first wirings overlapping with specific regions on the semiconductor substrate optimizes data access and processing.
Potential Applications
The technology described in this patent application could be applied in various semiconductor memory devices, such as RAM, ROM, and flash memory, to enhance data storage and retrieval efficiency.
Problems Solved
This technology solves the problem of slow data access and processing in semiconductor memory devices by optimizing the arrangement of sense amplifier regions and wiring layers for efficient data transfer.
Benefits
The benefits of this technology include faster data retrieval, improved data processing speed, and enhanced overall performance of semiconductor memory devices.
Potential Commercial Applications
The technology described in this patent application has potential commercial applications in the semiconductor industry for developing advanced memory devices with improved efficiency and performance.
Possible Prior Art
One possible prior art for this technology could be the use of sense amplifier regions and wiring layers in semiconductor memory devices to optimize data access and processing speed.
Unanswered Questions
How does this technology compare to existing memory device designs in terms of speed and efficiency?
This article does not provide a direct comparison with existing memory device designs to evaluate the speed and efficiency improvements offered by this technology.
What are the specific manufacturing processes involved in implementing this technology in semiconductor memory devices?
The article does not delve into the detailed manufacturing processes required to implement this technology in semiconductor memory devices.
Original Abstract Submitted
A semiconductor memory device includes a plurality of sense amplifier regions, a first wiring layer including a plurality of bit lines electrically connected to a plurality of semiconductor layers, and a second wiring layer including a plurality of first wirings electrically connecting the respective plurality of sense amplifier regions to the plurality of bit lines. The semiconductor substrate includes a first region and a second region arranged in a second direction. The (n1) (n1 is an integer of 2 or more) first wirings arranged in the third direction are disposed at a position where the first region overlaps with the sense amplifier region viewed in the first direction. The (n2) (n2 is an integer of 2 or more different from n1) first wirings arranged in the third direction are disposed at a position where the second region overlaps with the other sense amplifier region viewed in the first direction.
