18464668. SEMICONDUCTOR DEVICES simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)

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SEMICONDUCTOR DEVICES

Organization Name

SAMSUNG ELECTRONICS CO., LTD.

Inventor(s)

Youngwoo Kim of Hwaseong-si (KR)

Dawoon Jeong of Hwaseong-si (KR)

Tak Lee of Hwaseong-si (KR)

Jungmin Lee of Seoul (KR)

SEMICONDUCTOR DEVICES - A simplified explanation of the abstract

This abstract first appeared for US patent application 18464668 titled 'SEMICONDUCTOR DEVICES

Simplified Explanation

The abstract describes a semiconductor device that includes a substrate with two regions, insulating patterns in the second region that define active patterns, gate electrodes stacked on the substrate, separation regions in contact with the active patterns, and channel structures penetrating through the gate electrodes in the first region. At least one of the separation regions is in contact with the substrate below the insulating patterns.

  • The semiconductor device has a substrate with two distinct regions.
  • Insulating patterns are present in the second region and define active patterns of the substrate.
  • Gate electrodes are stacked on the substrate and spaced apart from each other, extending in a specific direction.
  • First separation regions are in contact with the active patterns and extend in the same direction as the gate electrodes.
  • Second separation regions are located between the first separation regions in the same direction.
  • Channel structures penetrate through the gate electrodes in the first region.
  • At least one of the second separation regions is in contact with the substrate below the insulating patterns.

Potential Applications

  • This semiconductor device can be used in various electronic devices such as smartphones, tablets, and computers.
  • It can be utilized in the manufacturing of integrated circuits and microprocessors.
  • The device can be employed in the development of advanced sensors and communication systems.

Problems Solved

  • The device solves the problem of efficiently separating active patterns and gate electrodes in a semiconductor device.
  • It addresses the challenge of creating channel structures that penetrate through the gate electrodes.
  • The device solves the issue of ensuring proper contact between the separation regions and the substrate below the insulating patterns.

Benefits

  • The semiconductor device provides improved performance and functionality in electronic devices.
  • It allows for more efficient manufacturing processes for integrated circuits and microprocessors.
  • The device enables the development of smaller and more advanced electronic components.


Original Abstract Submitted

A semiconductor device includes a substrate having a first region and a second region, insulating patterns in the substrate in the second region that define active patterns of the substrate, gate electrodes spaced apart from each other and stacked on an upper surface of the substrate and extending in a first direction, first separation regions extending in the first direction and in contact with the active patterns, second separation regions extending between the first separation regions in the first direction, and channel structures penetrating through the gate electrodes in the first region. At least one of the second separation regions is in contact with the substrate below the insulating patterns.