18463754. COMPOSITION FOR TREATING SEMICONDUCTOR AND METHOD FOR TREATING OBJECT TO BE TREATED simplified abstract (FUJIFILM Corporation)
COMPOSITION FOR TREATING SEMICONDUCTOR AND METHOD FOR TREATING OBJECT TO BE TREATED
Organization Name
Inventor(s)
Yuta Shigenoi of Haibara-gun (JP)
Atsushi Mizutani of Haibara-gun (JP)
Tomonori Takahashi of Haibara-gun (JP)
COMPOSITION FOR TREATING SEMICONDUCTOR AND METHOD FOR TREATING OBJECT TO BE TREATED - A simplified explanation of the abstract
This abstract first appeared for US patent application 18463754 titled 'COMPOSITION FOR TREATING SEMICONDUCTOR AND METHOD FOR TREATING OBJECT TO BE TREATED
Simplified Explanation
The present invention is a composition for treating a semiconductor that suppresses the etching of silicon germanium and increases the etching rate of silicon compared to silicon germanium. It also provides a method for treating a semiconductor using this composition.
- The composition includes a quaternary ammonium salt with a hydroxyl group, a polar organic solvent, a nitrogen-containing compound selected from a specific group, and water.
- The mass ratio of the nitrogen-containing compound to the quaternary ammonium salt is between 0.00001 and 0.1.
Potential applications of this technology:
- Semiconductor manufacturing: This composition can be used in the fabrication of semiconductor devices, where selective etching of silicon over silicon germanium is required.
- Integrated circuits: The composition can be used to etch silicon in the production of integrated circuits, enabling precise and controlled etching processes.
- Nanotechnology: The technology can be applied in the development of nanoscale devices and structures, where selective etching of silicon is necessary.
Problems solved by this technology:
- Selective etching: The composition addresses the challenge of selectively etching silicon without affecting silicon germanium, allowing for precise etching processes in semiconductor manufacturing.
- Etching rate control: The technology provides a means to control the etching rate of silicon, enabling more accurate and efficient fabrication processes.
Benefits of this technology:
- Enhanced etching selectivity: The composition allows for a large ratio of etching rate between silicon and silicon germanium, ensuring selective etching and avoiding damage to the desired material.
- Improved process control: The technology provides a method for controlling the etching rate of silicon, leading to more precise and controlled fabrication processes.
- Increased efficiency: By optimizing the etching process, the composition improves the efficiency of semiconductor manufacturing and reduces material waste.
Original Abstract Submitted
The present invention provides a composition for treating a semiconductor in which etching of silicon germanium is suppressed and a ratio of an etching rate of silicon to an etching rate of silicon germanium is large. In addition, the present invention provides a method for treating an object to be treated using a composition for treating a semiconductor. The composition for treating a semiconductor according to the present invention is a composition for treating a semiconductor including a quaternary ammonium salt having a hydroxyl group, a polar organic solvent, at least one nitrogen-containing compound selected from the group consisting of a compound represented by Formula (1), a compound represented by Formula (2), and salts thereof, and water, in which the mass ratio of the nitrogen-containing compound to the quaternary ammonium salt is 0.00001 to 0.1.
