18460929. OVERLAY MEASURING METHOD AND SYSTEM, AND METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE USING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
Contents
- 1 OVERLAY MEASURING METHOD AND SYSTEM, AND METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE USING THE SAME
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 OVERLAY MEASURING METHOD AND SYSTEM, AND METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE USING THE SAME - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
OVERLAY MEASURING METHOD AND SYSTEM, AND METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE USING THE SAME
Organization Name
Inventor(s)
Seungyoon Lee of Suwon-si (KR)
OVERLAY MEASURING METHOD AND SYSTEM, AND METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE USING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 18460929 titled 'OVERLAY MEASURING METHOD AND SYSTEM, AND METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE USING THE SAME
Simplified Explanation
The abstract describes a method for measuring overlay in semiconductor manufacturing using an electron beam and voltage contrast imaging. The method involves scanning an overlay mark with an electron beam to obtain a voltage contrast image, from which a defect function related to the overlay value is derived. Self-cross correlation is then performed on the defect function to determine the overlay.
- Overlay measurement method using an electron beam and voltage contrast imaging
- Scanning an overlay mark to obtain a voltage contrast image
- Deriving a defect function from the voltage contrast image data
- Performing self-cross correlation on the defect function to determine the overlay
Potential Applications
This technology can be applied in the semiconductor industry for precise overlay measurements during the manufacturing process.
Problems Solved
- Accurate measurement of overlay values in semiconductor manufacturing - Improving the quality and efficiency of semiconductor production processes
Benefits
- Enhanced precision in overlay measurement - Increased productivity and yield in semiconductor manufacturing
Potential Commercial Applications
Optimizing semiconductor manufacturing processes with improved overlay measurement technology
Possible Prior Art
Prior art in overlay measurement techniques using electron beam imaging and defect analysis in semiconductor manufacturing processes.
What are the limitations of this technology in real-world applications?
The limitations of this technology in real-world applications may include the complexity of the process, the need for specialized equipment, and potential challenges in integrating it into existing manufacturing workflows.
How does this technology compare to traditional overlay measurement methods?
This technology offers the advantage of higher precision and accuracy compared to traditional overlay measurement methods, potentially leading to improved quality control and efficiency in semiconductor manufacturing.
Original Abstract Submitted
In an overlay measurement method, an overlay mark having programmed overlay values is provided. The overlay mark is scanned with an electron beam to obtain a voltage contrast image. A defect function that changes according to the overlay value is obtained from voltage contrast image data. Self-cross correlation is performed on the defect function to determine an overlay.
