18460506. SEMICONDUCTOR MEMORY DEVICE AND MANUFACTURING METHOD simplified abstract (Kioxia Corporation)
Contents
- 1 SEMICONDUCTOR MEMORY DEVICE AND MANUFACTURING METHOD
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SEMICONDUCTOR MEMORY DEVICE AND MANUFACTURING METHOD - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
SEMICONDUCTOR MEMORY DEVICE AND MANUFACTURING METHOD
Organization Name
Inventor(s)
Tadashi Iguchi of Yokkaichi Mie (JP)
SEMICONDUCTOR MEMORY DEVICE AND MANUFACTURING METHOD - A simplified explanation of the abstract
This abstract first appeared for US patent application 18460506 titled 'SEMICONDUCTOR MEMORY DEVICE AND MANUFACTURING METHOD
Simplified Explanation
The semiconductor memory device described in the patent application includes a stacked body with insulating films and conductive films, first and second pillars extending through the stacked body, and a third pillar made of a conductor material. The first pillar has a semiconductor portion and an insulator portion on its outer surface, while the second pillars are made of insulator material with protrusions into the first film. The third pillar is electrically connected to one of the conductive films in the stacked body.
- The semiconductor memory device includes a stacked body with insulating and conductive films.
- First and second pillars extend through the stacked body, with the second pillars reaching the first film and having protrusions.
- A third pillar made of a conductor material is electrically connected to one of the conductive films.
Potential Applications
The technology described in the patent application could be applied in:
- Semiconductor memory devices
- Integrated circuits
- Electronic devices requiring high-density memory storage
Problems Solved
This technology helps address the following issues:
- Increasing memory storage capacity in semiconductor devices
- Enhancing the performance of integrated circuits
- Improving the efficiency of electronic devices
Benefits
The benefits of this technology include:
- Higher memory storage capacity
- Improved performance and speed of electronic devices
- Enhanced reliability and durability of semiconductor memory devices
Potential Commercial Applications
The potential commercial applications of this technology could be seen in:
- Consumer electronics
- Data storage devices
- Telecommunications equipment
Possible Prior Art
One possible prior art for this technology could be the use of stacked bodies in semiconductor memory devices with pillars extending through them. However, the specific configuration and materials used in the described invention may be novel and inventive.
Unanswered Questions
How does this technology compare to existing memory storage solutions?
The article does not provide a direct comparison with other memory storage solutions currently available in the market. It would be interesting to know how this technology stacks up in terms of performance, capacity, and cost.
What are the potential challenges in implementing this technology on a large scale?
The article does not address the potential challenges that may arise when implementing this technology on a large scale for mass production. Understanding the scalability and manufacturing feasibility of this innovation would be crucial for its commercial success.
Original Abstract Submitted
According to one embodiment, a semiconductor memory device has a first film and a stacked body on the first film. The stacked body includes insulating films and conductive films stacked in a first direction. A first pillar extends through the stacked body and has a first semiconductor portion and a first insulator portion on an outer peripheral surface. A plurality of second pillars extend in the stacked body and reach the first film. The second pillars each comprise an insulator material and have a bottom surface with a protrusion protruding into the first film. A third pillar extends in the stacked body between adjacent second pillars. The third pillar comprises a conductor material that is electrically connected to one of the conductive films of the stacked body.
