18460273. SEMICONDUCTOR DEVICE simplified abstract (ROHM CO., LTD.)
Contents
- 1 SEMICONDUCTOR DEVICE
SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18460273 titled 'SEMICONDUCTOR DEVICE
Simplified Explanation
The semiconductor device described in the abstract includes a chip with a trench insulation structure defining an active region, well regions, impurity regions, gate electrodes, gate insulating film, gate contact portion, and gate connection portion.
- The chip has a main surface.
- The trench insulation structure defines an active region on the main surface.
- A first conductivity type well region is formed in the active region.
- A second conductivity type first impurity region is formed in the well region.
- A second impurity region is formed in the well region surrounding the first impurity region.
- A gate electrode is formed on the well region between the first and second impurity regions.
- A gate insulating film is formed between the gate electrode and the well region.
- A gate contact portion is formed on the trench insulation structure.
- A gate connection portion crosses the second impurity region from the boundary between the trench insulation structure and the active region, connecting the gate contact portion and the gate electrode.
Potential Applications
The technology described in this patent application could be applied in the semiconductor industry for the development of advanced semiconductor devices with improved performance and efficiency.
Problems Solved
This technology solves the problem of optimizing the layout and design of semiconductor devices to enhance their functionality and reliability.
Benefits
The benefits of this technology include increased integration density, improved electrical characteristics, enhanced device performance, and overall cost-effectiveness in semiconductor manufacturing.
Potential Commercial Applications
The potential commercial applications of this technology could include the production of high-performance integrated circuits, power devices, and other semiconductor products for various industries.
Possible Prior Art
One possible prior art for this technology could be the use of similar trench insulation structures and impurity regions in semiconductor devices for enhancing device performance and functionality.
Unanswered Questions
How does this technology compare to existing semiconductor device designs in terms of performance and efficiency?
This article does not provide a direct comparison between this technology and existing semiconductor device designs in terms of performance and efficiency. Further research and testing would be needed to evaluate the specific advantages of this innovation over current designs.
What are the potential challenges or limitations in implementing this technology on a larger scale for commercial production?
The article does not address the potential challenges or limitations in implementing this technology on a larger scale for commercial production. Factors such as manufacturing costs, scalability, and compatibility with existing processes could be important considerations that need to be explored further.
Original Abstract Submitted
A semiconductor device includes: a chip having a main surface; a trench insulation structure that defines an active region in the main surface; a first conductivity type well region formed in the active region; a second conductivity type first impurity region formed in the well region; a second impurity region formed in the well region and surrounding the first impurity region in a plan view; a gate electrode formed on the well region between the first impurity region and the second impurity region, and surrounding the first impurity region in a plan view; a gate insulating film formed between the gate electrode and the well region; a gate contact portion formed on the trench insulation structure; and a gate connection portion that crosses the second impurity region from a boundary between the trench insulation structure and the active region and connects the gate contact portion and the gate electrode.
