18460236. SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE simplified abstract (Kioxia Corporation)
Contents
- 1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Tomoyuki Funabasama of Yokkaichi Mie (JP)
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18460236 titled 'SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
Simplified Explanation
The semiconductor device described in the abstract includes two transistors with different structures, including diffusion layer regions, gate insulating films, gate electrodes, and silicide layers. The first transistor has a larger distance between the silicide layer and the gate insulating film compared to the second transistor.
- The semiconductor device includes a substrate, a first transistor, and a second transistor.
- The first transistor has a first diffusion layer region, a second diffusion layer region, a first gate insulating film, a first gate electrode, and a first silicide layer.
- The second transistor has a third diffusion layer region, a fourth diffusion layer region, a second gate insulating film, a second gate electrode, and a second silicide layer.
- The distance between the first silicide layer and the first gate insulating film is larger than the distance between the second silicide layer and the second gate insulating film.
Potential Applications
The technology described in this patent application could be applied in the development of advanced semiconductor devices for various electronic applications, such as mobile devices, computers, and other consumer electronics.
Problems Solved
This technology helps in improving the performance and efficiency of semiconductor devices by optimizing the structure and placement of key components like diffusion layers, gate insulating films, and silicide layers.
Benefits
The benefits of this technology include enhanced functionality, increased speed, and reduced power consumption in semiconductor devices. It also allows for better integration of transistors on a single chip.
Potential Commercial Applications
- "Optimized Structure for Semiconductor Devices: Enhancing Performance and Efficiency"
Possible Prior Art
One possible prior art could be the use of different materials or structures in semiconductor devices to improve their performance and efficiency.
Unanswered Questions
How does this technology compare to existing semiconductor device structures?
The article does not provide a direct comparison to existing semiconductor device structures, leaving a gap in understanding the competitive advantage of this technology.
What specific electronic applications could benefit the most from this technology?
The article does not specify the exact electronic applications that could benefit the most from this technology, leaving room for further exploration and analysis in specific industries or products.
Original Abstract Submitted
A semiconductor device is provided with a substrate, a first transistor, and a second transistor. The first transistor has a first diffusion layer region, a second diffusion layer region, a first gate insulating film, a first gate electrode, and a first silicide layer. The first silicide layer is provided on the first diffusion layer region and the second diffusion layer region. The second transistor has a third diffusion layer region, a fourth diffusion layer region, a second gate insulating film, a second gate electrode, and a second silicide layer. The second silicide layer is provided on the third diffusion layer region and the fourth diffusion layer region. A distance between the first silicide layer and the first gate insulating film is larger than a distance between the second silicide layer and the second gate insulating film.
