18459532. PHOTOELECTRIC CONVERSION ELEMENT AND PHOTOELECTRIC CONVERSION DEVICE simplified abstract (CANON KABUSHIKI KAISHA)
PHOTOELECTRIC CONVERSION ELEMENT AND PHOTOELECTRIC CONVERSION DEVICE
Organization Name
Inventor(s)
DAIKI Shirahige of Kanagawa (JP)
PHOTOELECTRIC CONVERSION ELEMENT AND PHOTOELECTRIC CONVERSION DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18459532 titled 'PHOTOELECTRIC CONVERSION ELEMENT AND PHOTOELECTRIC CONVERSION DEVICE
Simplified Explanation
The photoelectric conversion element described in the patent application consists of a semiconductor layer with a first semiconductor region and a second semiconductor region forming an avalanche photodiode, a light guide structure, and an optical structure layer.
- The second portion of the light guide structure is positioned at least 0.8 μm deep from the second face of the semiconductor layer.
- The first and second semiconductor regions are closer to the first face than the second portion of the light guide structure.
- The second portion of the light guide structure overlaps with at least a portion of an avalanche multiplication region between the first and second semiconductor regions.
Potential Applications
This technology can be applied in:
- High-speed and high-sensitivity photodetectors
- Optical communication systems
- Imaging devices
Problems Solved
This technology addresses issues such as:
- Low efficiency in photoelectric conversion
- Limited sensitivity in photodetectors
- Inefficient avalanche multiplication in photodiodes
Benefits
The benefits of this technology include:
- Improved efficiency in converting light to electricity
- Increased sensitivity in detecting light signals
- Enhanced performance of avalanche photodiodes
Original Abstract Submitted
A photoelectric conversion element includes in a semiconductor layer a first semiconductor region arranged, a second semiconductor region arranged on a second face side closer than the first semiconductor region and forming a p-n junction with the first semiconductor region to form an avalanche photodiode, a light guide structure including a first portion surrounding a first region and a second portion surrounding a second region inside the first region in a plan view, and an optical structure layer disposed on the second face side. The second portion is disposed over a depth of at least 0.8 μm from the second face, the first and second semiconductor regions are arranged closer to the first face than the second portion, and the second portion overlaps at least a portion of an avalanche multiplication region between the first and second semiconductor region in the plan view.
