18458526. DISPLAY DEVICE simplified abstract (Samsung Display Co., Ltd.)
Contents
DISPLAY DEVICE
Organization Name
Inventor(s)
Jin Sung An of Seongnam-si (KR)
Seok Je Seong of Seongnam-si (KR)
Ji Seon Lee of Hwaseong-si (KR)
DISPLAY DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18458526 titled 'DISPLAY DEVICE
Simplified Explanation
The patent application describes a display device that includes various components such as a substrate, polycrystalline semiconductor layer, gate electrodes, oxide semiconductor layer, and initialization voltage lines.
- The display device includes a substrate and a polycrystalline semiconductor layer with driving transistors and a seventh transistor.
- The gate electrodes of the driving transistor and the seventh transistor overlap their respective channels.
- An oxide semiconductor layer is included with a fourth transistor, and its gate electrode overlaps the channel of the fourth transistor.
- A first initialization voltage line is connected to the first electrode of the fourth transistor, and both are positioned on the same layer.
- A second initialization voltage line is connected to the second electrode of the seventh transistor, and both are positioned on different layers from each other.
Potential applications of this technology:
- Display devices in electronic devices such as smartphones, tablets, and televisions.
- High-resolution screens for gaming consoles and computer monitors.
- Augmented reality and virtual reality headsets.
Problems solved by this technology:
- Improved performance and efficiency of display devices.
- Enhanced image quality and resolution.
- Reduction in power consumption and heat generation.
Benefits of this technology:
- Higher pixel density and sharper images.
- Faster response times and smoother motion display.
- Lower power consumption and longer battery life.
- Improved overall performance and user experience.
Original Abstract Submitted
A display device includes a substrate, a polycrystalline semiconductor layer including a channel of a driving transistor, and a channel of a seventh transistor, a gate electrode of the driving transistor overlapping the channel thereof, a gate electrode of the seventh transistor overlapping the channel thereof, an oxide semiconductor layer including a channel of a fourth transistor, a gate electrode thereof overlapping the channel of the fourth transistor, a first initialization voltage line connected to a first electrode of the fourth transistor, the first initialization voltage line and the gate electrode of the fourth transistor being position on a same layer, and a second initialization voltage line connected to a second electrode of the seventh transistor, the second initialization voltage line and the first initialization voltage line being positioned on different layers from each other.
