18456832. SEMICONDUCTOR DEVICE simplified abstract (Japan Display Inc.)
Contents
- 1 SEMICONDUCTOR DEVICE
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.10.1 How does the higher hydrogen concentration in the second region of the gate insulating layer impact the overall performance of the semiconductor device?
- 1.10.2 What specific impurities are present in the source region, drain region, and second region of the oxide semiconductor layer, and how do they contribute to the functionality of the device?
- 1.11 Original Abstract Submitted
SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Toshinari Sasaki of Tokyo (JP)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18456832 titled 'SEMICONDUCTOR DEVICE
Simplified Explanation
The semiconductor device described in the abstract includes various layers and regions that play specific roles in the functionality of the device. Here is a simplified explanation along with bullet points to further clarify the patent/innovation:
- The device consists of an oxide insulating layer, an oxide semiconductor layer, a gate insulating layer, a gate electrode, and a protective insulating layer. - The gate insulating layer has two regions: one overlapping the gate electrode and one not overlapping it, with the latter in contact with the protective insulating layer. - The oxide insulating layer also has two regions: one overlapping the gate electrode and one not overlapping it or the oxide semiconductor layer, with the latter in contact with the gate insulating layer. - The oxide semiconductor layer contains a channel region, a source region, and a drain region, each with impurities. - The hydrogen concentration in the second region of the gate insulating layer is higher than in the first region.
Potential Applications
- Advanced semiconductor devices - High-performance electronics
Problems Solved
- Improved performance and reliability of semiconductor devices - Enhanced control over electrical properties
Benefits
- Higher efficiency and speed in electronic devices - Better integration of components
Potential Commercial Applications
Enhancing Semiconductor Devices for Improved Performance
Possible Prior Art
No prior art is known at this time.
Unanswered Questions
How does the higher hydrogen concentration in the second region of the gate insulating layer impact the overall performance of the semiconductor device?
The abstract does not provide specific details on the exact effects of the higher hydrogen concentration in the second region of the gate insulating layer.
What specific impurities are present in the source region, drain region, and second region of the oxide semiconductor layer, and how do they contribute to the functionality of the device?
The abstract mentions the presence of impurities in these regions but does not specify the types of impurities or their roles in the device's operation.
Original Abstract Submitted
A semiconductor device according to an embodiment of the present invention includes an oxide insulating layer, an oxide semiconductor layer, a gate insulating layer, a gate electrode, and a protective insulating layer. The gate insulating layer includes a first region overlapping the gate electrode and a second region not overlapping the gate electrode. The second region is in contact with the protective insulating layer. The oxide insulating layer includes a third region overlapping the gate electrode and a fourth region not overlapping the gate electrode and the oxide semiconductor layer. The fourth region is in contact with the gate insulating layer. The oxide semiconductor layer includes a channel region, a source region, and a drain region. Each of the source region, the drain region, and the second region contains an impurity. A hydrogen concentration of the second region is greater than a hydrogen concentration of the first region.
